NCEP030N85GU Datasheet. Specs and Replacement

Type Designator: NCEP030N85GU

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 170 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 140 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 980 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00305 Ohm

Package: PDFN5X6-8L

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NCEP030N85GU datasheet

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NCEP030N85GU

http //www.ncepower.com NCEP030N85GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP030N85GU uses Super Trench II technology that is V =85V,I =140A DS D uniquely optimized to provide the most efficient high frequency R =2.65m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R pro... See More ⇒

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 ncep030n85ll.pdf pdf_icon

NCEP030N85GU

NCEP030N85LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =210A DS D switching performance. Both conduction and switching power R =2.65m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinat... See More ⇒

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 ncep030n60agu.pdf pdf_icon

NCEP030N85GU

Pb Free Product http //www.ncepower.com NCEP030N60AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP030N60AGU uses Super Trench II technology that V =60V,I =95A DS D is uniquely optimized to provide the most efficient high R =2.2m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =3.0m (typical) @ V =4.5V DS(ON... See More ⇒

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 ncep030n12.pdf pdf_icon

NCEP030N85GU

NCEP030N12,NCEP030N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =215A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.4m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.2m , typical (TO-26... See More ⇒

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Detailed specifications: NCEP02T10LL, NCEP02T10T, NCEP02T11D, NCEP02T11T, NCEP030N12, NCEP030N12D, NCEP030N30GU, NCEP030N60AGU, SKD502T, NCEP030N85LL, NCEP031N85M, NCEP033N10, NCEP033N10D, NCEP033N10M, NCEP033N85M, NCEP035N10M, NCEP035N12

Keywords - NCEP030N85GU MOSFET specs

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