NCEP035N85 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP035N85
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 210 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 85 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 150 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 12 nS
Cossⓘ - Capacitancia de salida: 980 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
Encapsulados: TO-220
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NCEP035N85 datasheet
..1. Size:414K ncepower
ncep035n85 ncep035n85d.pdf 
NCEP035N85,NCEP035N85D http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.3m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.1m
..2. Size:414K ncepower
ncep035n85.pdf
NCEP035N85,NCEP035N85D http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.3m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.1m
0.1. Size:414K ncepower
ncep035n85d.pdf
NCEP035N85,NCEP035N85D http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.3m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.1m
0.2. Size:326K ncepower
ncep035n85gu.pdf
http //www.ncepower.com NCEP035N85GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP035N85GU uses Super Trench II technology that is VDS =85V,ID =135A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m (typical) @ VGS=10V switching performance. Both conduction and switching power losses are minimized due to an extremel
6.1. Size:1386K ncepower
ncep035n60ag.pdf
Pb Free Product http //www.ncepower.com NCEP035N60AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP035N60AG uses Super Trench II technology that is V =60V,I =90A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.5m (typical) @
6.2. Size:397K ncepower
ncep035n10m.pdf
NCEP035N10M, NCEP035N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.0m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.8m , typical (TO
6.3. Size:729K ncepower
ncep035n60k.pdf
http //www.ncepower.com NCEP035N60K NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP035N60K uses Super Trench II technology that is V =60V,I =130A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R produc
6.4. Size:717K ncepower
ncep035n60ak.pdf
http //www.ncepower.com NCEP035N60AK NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP035N60AK uses Super Trench II technology that is V =60V,I =130A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.5m (typical) @ V =4.5V DS(ON)
6.5. Size:346K ncepower
ncep035n12.pdf
NCEP035N12,NCEP035N12D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
6.6. Size:777K ncepower
ncep035n72gu.pdf
NCEP035N72GU NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =72V,I =120A DS D switching performance. Both conduction and switching power R =2.4m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinat
6.7. Size:309K ncepower
ncep035n12vd.pdf
NCEP035N12VD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=2.5m , typical@ VGS=10V losses are minimized due to an extremely low combin
6.8. Size:346K ncepower
ncep035n12d.pdf
NCEP035N12,NCEP035N12D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
6.9. Size:346K ncepower
ncep035n12 ncep035n12d.pdf
NCEP035N12,NCEP035N12D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
6.10. Size:361K ncepower
ncep035n72.pdf
NCEP035N72 NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =72V,ID =140A switching performance. Both conduction and switching power RDS(ON)=3.3m , typical @ VGS=10V losses are minimized due to an extremely low combinat
Otros transistores... NCEP035N12, NCEP035N12D, NCEP035N12VD, NCEP035N60AG, NCEP035N60AK, NCEP035N60K, NCEP035N72, NCEP035N72GU, AO4407, NCEP035N85D, NCEP036N10MSL, NCEP038N10GU, NCEP039N10F, NCEP040N10GU, NCEP040N10M, NCEP040N12, NCEP040N12D
