NCEP035N85 datasheet, подбор замены

 ..1. Size:414K  ncepower
 ncep035n85 ncep035n85d.pdf 

NCEP035N85,NCEP035N85D http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.3m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.1m

 ..2. Size:414K  ncepower
 ncep035n85.pdf 

NCEP035N85,NCEP035N85D http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.3m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.1m

 0.1. Size:414K  ncepower
 ncep035n85d.pdf 

NCEP035N85,NCEP035N85D http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.3m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.1m

 0.2. Size:326K  ncepower
 ncep035n85gu.pdf 

http //www.ncepower.com NCEP035N85GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP035N85GU uses Super Trench II technology that is VDS =85V,ID =135A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m (typical) @ VGS=10V switching performance. Both conduction and switching power losses are minimized due to an extremel

 6.1. Size:1386K  ncepower
 ncep035n60ag.pdf 

Pb Free Product http //www.ncepower.com NCEP035N60AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP035N60AG uses Super Trench II technology that is V =60V,I =90A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.5m (typical) @

 6.2. Size:397K  ncepower
 ncep035n10m.pdf 

NCEP035N10M, NCEP035N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.0m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.8m , typical (TO

 6.3. Size:729K  ncepower
 ncep035n60k.pdf 

http //www.ncepower.com NCEP035N60K NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP035N60K uses Super Trench II technology that is V =60V,I =130A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R produc

 6.4. Size:717K  ncepower
 ncep035n60ak.pdf 

http //www.ncepower.com NCEP035N60AK NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP035N60AK uses Super Trench II technology that is V =60V,I =130A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.5m (typical) @ V =4.5V DS(ON)

 6.5. Size:346K  ncepower
 ncep035n12.pdf 

NCEP035N12,NCEP035N12D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 6.6. Size:777K  ncepower
 ncep035n72gu.pdf 

NCEP035N72GU NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =72V,I =120A DS D switching performance. Both conduction and switching power R =2.4m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinat

 6.7. Size:309K  ncepower
 ncep035n12vd.pdf 

NCEP035N12VD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=2.5m , typical@ VGS=10V losses are minimized due to an extremely low combin

 6.8. Size:346K  ncepower
 ncep035n12d.pdf 

NCEP035N12,NCEP035N12D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 6.9. Size:346K  ncepower
 ncep035n12 ncep035n12d.pdf 

NCEP035N12,NCEP035N12D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 6.10. Size:361K  ncepower
 ncep035n72.pdf 

NCEP035N72 NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =72V,ID =140A switching performance. Both conduction and switching power RDS(ON)=3.3m , typical @ VGS=10V losses are minimized due to an extremely low combinat