FQB4N80 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FQB4N80
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 130 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.6 Ohm
Paquete / Cubierta: TO263 D2PAK

Búsqueda de reemplazo de MOSFET FQB4N80

FQB4N80 Datasheet (PDF)

..1. Size:8196K fairchild semi
fqb4n80 fqi4n80.pdf

October 2008QFETFQB4N80 / FQI4N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.9A, 800V, RDS(on) = 3.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 8.6 pF)This advanced technology has been especially

..2. Size:968K onsemi
fqb4n80 fqi4n80.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.1. Size:726K fairchild semi
fqb4n25tm fqi4n25tu.pdf

May 2000TMQFETQFETQFETQFETFQB4N25 / FQI4N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.6A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology

9.2. Size:644K fairchild semi
fqb4n90tm fqi4n90tu.pdf

October 2001TMQFETFQB4N90 / FQI4N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.2A, 900V, RDS(on) = 3.3 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typically 24 nC)planar stripe, DMOS technology. Low Crss ( typically 9.5 pF)This advanced technology has been es

9.3. Size:517K fairchild semi
fqb4n20ltm.pdf

December 2000TMQFETQFETQFETQFETFQB4N20L / FQI4N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced

9.4. Size:704K fairchild semi
fqb4n20 fqi4n20.pdf

April 2000TMQFETQFETQFETQFETFQB4N20 / FQI4N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.6A, 200V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology

9.5. Size:698K fairchild semi
fqb4n20tm fqi4n20tu.pdf

9.6. Size:745K fairchild semi
fqb4n50tm.pdf

April 2000TMQFETQFETQFETQFETFQB4N50 / FQI4N50500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.4A, 500V, RDS(on) = 2.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology

Otros transistores... SDD03N50 , FQB34N20L , SDD03N04 , FQB34P10 , FQB34P10TMF085 , FQB44N10 , SDD02N70 , FQB47P06 , IRFP260N , SDD02N60 , FQB50N06 , FQB50N06L , FQB55N10 , SDD01N70 , FQB5N50C , FQB5N90 , FQB6N80 .

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