All MOSFET. FQB4N80 Datasheet

 

FQB4N80 Datasheet and Replacement


   Type Designator: FQB4N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 3.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 19 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.6 Ohm
   Package: TO263 D2PAK
 

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FQB4N80 Datasheet (PDF)

 ..1. Size:8196K  fairchild semi
 fqb4n80 fqi4n80.pdf pdf_icon

FQB4N80

October 2008QFETFQB4N80 / FQI4N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.9A, 800V, RDS(on) = 3.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 8.6 pF)This advanced technology has been especially

 ..2. Size:968K  onsemi
 fqb4n80 fqi4n80.pdf pdf_icon

FQB4N80

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:726K  fairchild semi
 fqb4n25tm fqi4n25tu.pdf pdf_icon

FQB4N80

May 2000TMQFETQFETQFETQFETFQB4N25 / FQI4N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.6A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology

 9.2. Size:644K  fairchild semi
 fqb4n90tm fqi4n90tu.pdf pdf_icon

FQB4N80

October 2001TMQFETFQB4N90 / FQI4N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.2A, 900V, RDS(on) = 3.3 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typically 24 nC)planar stripe, DMOS technology. Low Crss ( typically 9.5 pF)This advanced technology has been es

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Datasheet: SDD03N50 , FQB34N20L , SDD03N04 , FQB34P10 , FQB34P10TMF085 , FQB44N10 , SDD02N70 , FQB47P06 , AON6414A , SDD02N60 , FQB50N06 , FQB50N06L , FQB55N10 , SDD01N70 , FQB5N50C , FQB5N90 , FQB6N80 .

Keywords - FQB4N80 MOSFET datasheet

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