NCEP040N12 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP040N12
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 245 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 150 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 620 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET NCEP040N12
NCEP040N12 Datasheet (PDF)
ncep040n12.pdf
NCEP040N12, NCEP040N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.3m , typical (TO-2
ncep040n12 ncep040n12d.pdf
NCEP040N12, NCEP040N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.3m , typical (TO-2
ncep040n12d.pdf
NCEP040N12, NCEP040N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.3m , typical (TO-2
ncep040n10.pdf
NCEP040N10,NCEP040N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=
ncep040n10d.pdf
NCEP040N10,NCEP040N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=
ncep040n10m.pdf
NCEP040N10M,NCEP040N10MDNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VG
ncep040n10gu.pdf
http://www.ncepower.com NCEP040N10GUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP040N10GU uses Super Trench II technology that is V =100V,I =130ADS Duniquely optimized to provide the most efficient high frequencyR =3.6m (Typ.) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R produc
ncep040n10 ncep040n10d.pdf
NCEP040N10,NCEP040N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: BLF6G10L-260PRN
History: BLF6G10L-260PRN
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918