All MOSFET. NCEP040N12 Datasheet

 

NCEP040N12 Datasheet and Replacement


   Type Designator: NCEP040N12
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 245 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 620 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO-220
 

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NCEP040N12 Datasheet (PDF)

 ..1. Size:400K  ncepower
 ncep040n12.pdf pdf_icon

NCEP040N12

NCEP040N12, NCEP040N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.3m , typical (TO-2

 ..2. Size:400K  ncepower
 ncep040n12 ncep040n12d.pdf pdf_icon

NCEP040N12

NCEP040N12, NCEP040N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.3m , typical (TO-2

 0.1. Size:400K  ncepower
 ncep040n12d.pdf pdf_icon

NCEP040N12

NCEP040N12, NCEP040N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.3m , typical (TO-2

 5.1. Size:363K  ncepower
 ncep040n10.pdf pdf_icon

NCEP040N12

NCEP040N10,NCEP040N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=

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Datasheet: NCEP035N72GU , NCEP035N85 , NCEP035N85D , NCEP036N10MSL , NCEP038N10GU , NCEP039N10F , NCEP040N10GU , NCEP040N10M , 13N50 , NCEP040N12D , NCEP040N85G , NCEP040N85GU , NCEP040N85M , NCEP040N85MD , NCEP040NH150LL , NCEP045N10AG , NCEP045N10F .

History: WNM12N65 | SSM9985GM | STH8NA80FI | SSP80R240SFD | WMS04N10TS | SSBG65R075SFD2

Keywords - NCEP040N12 MOSFET datasheet

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