NCEP040N12 Datasheet. Specs and Replacement

Type Designator: NCEP040N12

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 245 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 620 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO-220

NCEP040N12 substitution

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NCEP040N12 datasheet

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NCEP040N12

NCEP040N12, NCEP040N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.3m , typical (TO-2... See More ⇒

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NCEP040N12

NCEP040N12, NCEP040N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.3m , typical (TO-2... See More ⇒

 0.1. Size:400K  ncepower
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NCEP040N12

NCEP040N12, NCEP040N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.3m , typical (TO-2... See More ⇒

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NCEP040N12

NCEP040N10,NCEP040N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=... See More ⇒

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Detailed specifications: NCEP035N72GU, NCEP035N85, NCEP035N85D, NCEP036N10MSL, NCEP038N10GU, NCEP039N10F, NCEP040N10GU, NCEP040N10M, 5N60, NCEP040N12D, NCEP040N85G, NCEP040N85GU, NCEP040N85M, NCEP040N85MD, NCEP040NH150LL, NCEP045N10AG, NCEP045N10F

Keywords - NCEP040N12 MOSFET specs

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