NCEP040N85MD Todos los transistores

 

NCEP040N85MD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP040N85MD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 140 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 1000 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0039 Ohm
   Paquete / Cubierta: TO-263

 Búsqueda de reemplazo de MOSFET NCEP040N85MD

 

NCEP040N85MD Datasheet (PDF)

 ..1. Size:1002K  ncepower
ncep040n85md.pdf

NCEP040N85MD
NCEP040N85MD

Pb Free ProductNCEP040N85M NCEP040N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =140ADS Dswitching performance. Both conduction and switching power R =3.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimi

 ..2. Size:1002K  ncepower
ncep040n85m ncep040n85md.pdf

NCEP040N85MD
NCEP040N85MD

Pb Free ProductNCEP040N85M NCEP040N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =140ADS Dswitching performance. Both conduction and switching power R =3.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimi

 3.1. Size:1002K  ncepower
ncep040n85m.pdf

NCEP040N85MD
NCEP040N85MD

Pb Free ProductNCEP040N85M NCEP040N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =140ADS Dswitching performance. Both conduction and switching power R =3.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimi

 4.1. Size:699K  ncepower
ncep040n85.pdf

NCEP040N85MD
NCEP040N85MD

NCEP040N85, NCEP040N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =140ADS Dswitching performance. Both conduction and switching power R =3.5m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an extr

 4.2. Size:1123K  ncepower
ncep040n85g.pdf

NCEP040N85MD
NCEP040N85MD

http://www.ncepower.com NCEP040N85GNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP040N85G uses Super Trench II technology that is V =85V,I =120ADS Duniquely optimized to provide the most efficient high frequencyR =3.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R produc

 4.3. Size:683K  ncepower
ncep040n85gu.pdf

NCEP040N85MD
NCEP040N85MD

http://www.ncepower.com NCEP040N85GUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP040N85GU uses Super Trench II technology that is V =85V,I =125ADS Duniquely optimized to provide the most efficient high frequency R =3.2m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerlosses are minimized due to an extrem

 4.4. Size:325K  ncepower
ncep040n85 ncep040n85d.pdf

NCEP040N85MD
NCEP040N85MD

NCEP040N85, NCEP040N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =140A switching performance. Both conduction and switching power RDS(ON)=3.5m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 4.5. Size:699K  ncepower
ncep040n85d.pdf

NCEP040N85MD
NCEP040N85MD

NCEP040N85, NCEP040N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =140ADS Dswitching performance. Both conduction and switching power R =3.5m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an extr

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


NCEP040N85MD
  NCEP040N85MD
  NCEP040N85MD
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top