NCEP040N85MD Todos los transistores

 

NCEP040N85MD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP040N85MD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 140 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 1000 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0039 Ohm
   Paquete / Cubierta: TO-263
 

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NCEP040N85MD Datasheet (PDF)

 ..1. Size:1002K  ncepower
 ncep040n85md.pdf pdf_icon

NCEP040N85MD

Pb Free ProductNCEP040N85M NCEP040N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =140ADS Dswitching performance. Both conduction and switching power R =3.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimi

 ..2. Size:1002K  ncepower
 ncep040n85m ncep040n85md.pdf pdf_icon

NCEP040N85MD

Pb Free ProductNCEP040N85M NCEP040N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =140ADS Dswitching performance. Both conduction and switching power R =3.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimi

 3.1. Size:1002K  ncepower
 ncep040n85m.pdf pdf_icon

NCEP040N85MD

Pb Free ProductNCEP040N85M NCEP040N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =140ADS Dswitching performance. Both conduction and switching power R =3.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimi

 4.1. Size:699K  ncepower
 ncep040n85.pdf pdf_icon

NCEP040N85MD

NCEP040N85, NCEP040N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =140ADS Dswitching performance. Both conduction and switching power R =3.5m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an extr

MOSTRAR MÁS

Otros transistores... NCEP039N10F , NCEP040N10GU , NCEP040N10M , NCEP040N12 , NCEP040N12D , NCEP040N85G , NCEP040N85GU , NCEP040N85M , 2N60 , NCEP040NH150LL , NCEP045N10AG , NCEP045N10F , NCEP045N10G , NCEP045N10M , NCEP045N85 , NCEP045N85G , NCEP045N85GU .

History: RU55111R | STI150N10F7 | KIA3510A-252 | RU3080L | IRFB3006G | IRFR4510PBF | RU30P3B

 

 
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