NCEP040N85MD Datasheet. Specs and Replacement
Type Designator: NCEP040N85MD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 140 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 1000 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
Package: TO-263
NCEP040N85MD substitution
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NCEP040N85MD datasheet
ncep040n85md.pdf
Pb Free Product NCEP040N85M NCEP040N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =140A DS D switching performance. Both conduction and switching power R =3.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimi... See More ⇒
ncep040n85m ncep040n85md.pdf
Pb Free Product NCEP040N85M NCEP040N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =140A DS D switching performance. Both conduction and switching power R =3.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimi... See More ⇒
ncep040n85m.pdf
Pb Free Product NCEP040N85M NCEP040N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =140A DS D switching performance. Both conduction and switching power R =3.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimi... See More ⇒
ncep040n85.pdf
NCEP040N85, NCEP040N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =140A DS D switching performance. Both conduction and switching power R =3.5m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an extr... See More ⇒
Detailed specifications: NCEP039N10F, NCEP040N10GU, NCEP040N10M, NCEP040N12, NCEP040N12D, NCEP040N85G, NCEP040N85GU, NCEP040N85M, 20N50, NCEP040NH150LL, NCEP045N10AG, NCEP045N10F, NCEP045N10G, NCEP045N10M, NCEP045N85, NCEP045N85G, NCEP045N85GU
Keywords - NCEP040N85MD MOSFET specs
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