NCEP040NH150LL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP040NH150LL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 618 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 265 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 40 nS
Cossⓘ - Capacitancia de salida: 2050 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Encapsulados: TOLL
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NCEP040NH150LL datasheet
..1. Size:756K ncepower
ncep040nh150ll.pdf 
NCEP040NH150LL http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description General Features The series of devices uses Super Trench III technology that is V =150V,I =265A DS D uniquely optimized to provide the most efficient high frequency R =3.3m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate char
6.1. Size:400K ncepower
ncep040n12d.pdf
NCEP040N12, NCEP040N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.3m , typical (TO-2
6.2. Size:363K ncepower
ncep040n10.pdf
NCEP040N10,NCEP040N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=
6.3. Size:363K ncepower
ncep040n10d.pdf
NCEP040N10,NCEP040N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=
6.4. Size:699K ncepower
ncep040n85.pdf
NCEP040N85, NCEP040N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =140A DS D switching performance. Both conduction and switching power R =3.5m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an extr
6.5. Size:1002K ncepower
ncep040n85m.pdf
Pb Free Product NCEP040N85M NCEP040N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =140A DS D switching performance. Both conduction and switching power R =3.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimi
6.6. Size:1002K ncepower
ncep040n85md.pdf
Pb Free Product NCEP040N85M NCEP040N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =140A DS D switching performance. Both conduction and switching power R =3.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimi
6.7. Size:1123K ncepower
ncep040n85g.pdf
http //www.ncepower.com NCEP040N85G NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP040N85G uses Super Trench II technology that is V =85V,I =120A DS D uniquely optimized to provide the most efficient high frequency R =3.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R produc
6.8. Size:683K ncepower
ncep040n85gu.pdf
http //www.ncepower.com NCEP040N85GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP040N85GU uses Super Trench II technology that is V =85V,I =125A DS D uniquely optimized to provide the most efficient high frequency R =3.2m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power losses are minimized due to an extrem
6.9. Size:400K ncepower
ncep040n12.pdf
NCEP040N12, NCEP040N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.3m , typical (TO-2
6.10. Size:363K ncepower
ncep040n10m.pdf
NCEP040N10M,NCEP040N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VG
6.11. Size:1002K ncepower
ncep040n85m ncep040n85md.pdf
Pb Free Product NCEP040N85M NCEP040N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =140A DS D switching performance. Both conduction and switching power R =3.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimi
6.12. Size:325K ncepower
ncep040n85 ncep040n85d.pdf
NCEP040N85, NCEP040N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =140A switching performance. Both conduction and switching power RDS(ON)=3.5m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
6.13. Size:699K ncepower
ncep040n85d.pdf
NCEP040N85, NCEP040N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =140A DS D switching performance. Both conduction and switching power R =3.5m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an extr
6.14. Size:985K ncepower
ncep040n10gu.pdf
http //www.ncepower.com NCEP040N10GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP040N10GU uses Super Trench II technology that is V =100V,I =130A DS D uniquely optimized to provide the most efficient high frequency R =3.6m (Typ.) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R produc
6.15. Size:363K ncepower
ncep040n10 ncep040n10d.pdf
NCEP040N10,NCEP040N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=
6.16. Size:400K ncepower
ncep040n12 ncep040n12d.pdf
NCEP040N12, NCEP040N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.3m , typical (TO-2
Otros transistores... NCEP040N10GU, NCEP040N10M, NCEP040N12, NCEP040N12D, NCEP040N85G, NCEP040N85GU, NCEP040N85M, NCEP040N85MD, IRF520, NCEP045N10AG, NCEP045N10F, NCEP045N10G, NCEP045N10M, NCEP045N85, NCEP045N85G, NCEP045N85GU, NCEP048N72
