NCEP040NH150LL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP040NH150LL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 618 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 265 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 2050 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Paquete / Cubierta: TOLL
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NCEP040NH150LL Datasheet (PDF)
ncep040nh150ll.pdf
NCEP040NH150LLhttp://www.ncepower.comNCE N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench III technology that is V =150V,I =265ADS Duniquely optimized to provide the most efficient high frequencyR =3.3m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate char
ncep040n12d.pdf
NCEP040N12, NCEP040N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.3m , typical (TO-2
ncep040n10.pdf
NCEP040N10,NCEP040N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=
ncep040n10d.pdf
NCEP040N10,NCEP040N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=
ncep040n85.pdf
NCEP040N85, NCEP040N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =140ADS Dswitching performance. Both conduction and switching power R =3.5m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an extr
ncep040n85m.pdf
Pb Free ProductNCEP040N85M NCEP040N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =140ADS Dswitching performance. Both conduction and switching power R =3.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimi
ncep040n85md.pdf
Pb Free ProductNCEP040N85M NCEP040N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =140ADS Dswitching performance. Both conduction and switching power R =3.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimi
ncep040n85g.pdf
http://www.ncepower.com NCEP040N85GNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP040N85G uses Super Trench II technology that is V =85V,I =120ADS Duniquely optimized to provide the most efficient high frequencyR =3.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R produc
ncep040n85gu.pdf
http://www.ncepower.com NCEP040N85GUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP040N85GU uses Super Trench II technology that is V =85V,I =125ADS Duniquely optimized to provide the most efficient high frequency R =3.2m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerlosses are minimized due to an extrem
ncep040n12.pdf
NCEP040N12, NCEP040N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.3m , typical (TO-2
ncep040n10m.pdf
NCEP040N10M,NCEP040N10MDNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VG
ncep040n85m ncep040n85md.pdf
Pb Free ProductNCEP040N85M NCEP040N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =140ADS Dswitching performance. Both conduction and switching power R =3.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimi
ncep040n85 ncep040n85d.pdf
NCEP040N85, NCEP040N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =140A switching performance. Both conduction and switching power RDS(ON)=3.5m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
ncep040n85d.pdf
NCEP040N85, NCEP040N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =140ADS Dswitching performance. Both conduction and switching power R =3.5m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an extr
ncep040n10gu.pdf
http://www.ncepower.com NCEP040N10GUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP040N10GU uses Super Trench II technology that is V =100V,I =130ADS Duniquely optimized to provide the most efficient high frequencyR =3.6m (Typ.) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R produc
ncep040n10 ncep040n10d.pdf
NCEP040N10,NCEP040N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=
ncep040n12 ncep040n12d.pdf
NCEP040N12, NCEP040N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.3m , typical (TO-2
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