NCEP045N85GU Datasheet. Equivalente

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 ncep045n85gu.pdf

NCEP045N85GU NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =110A switching performance. Both conduction and switching power RDS(ON)=4.1m , typical @ VGS=10V losses are minimized due to an extremely low combin

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 ncep045n85g.pdf

NCEP045N85G NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =110A DS D switching performance. Both conduction and switching power R =3.7m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinatio

 4.1. Size:968K  ncepower
 ncep045n85.pdf

NCEP045N85 NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =150A DS D switching performance. Both conduction and switching power R =3.7m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinatio

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 ncep045n10ag.pdf

NCEP045N10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.0m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=5.0m , typical @ VGS=4.5V losses are m

 6.2. Size:371K  ncepower
 ncep045n10 ncep045n10d.pdf

NCEP045N10,NCEP045N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=4.0m , typical (TO-263

 6.3. Size:371K  ncepower
 ncep045n10d.pdf

NCEP045N10,NCEP045N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=4.0m , typical (TO-263

 6.4. Size:354K  ncepower
 ncep045n10g.pdf

http //www.ncepower.com NCEP045N10G NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP045N10G uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.8m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on

 6.5. Size:371K  ncepower
 ncep045n10.pdf

NCEP045N10,NCEP045N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=4.0m , typical (TO-263

 6.6. Size:371K  ncepower
 ncep045n10m.pdf

NCEP045N10M,NCEP045N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=4.0m , typical (TO-2

 6.7. Size:316K  ncepower
 ncep045n10f.pdf

NCEP045N10F NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =60A switching performance. Both conduction and switching power RDS(ON)=4.7m , typical@ VGS=10V losses are minimized due to an extremely low combination o