NCEP045N85GU Datasheet. Specs and Replacement

Type Designator: NCEP045N85GU

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 635 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: DFN5X6-8L

NCEP045N85GU substitution

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NCEP045N85GU datasheet

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NCEP045N85GU

NCEP045N85GU NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =110A switching performance. Both conduction and switching power RDS(ON)=4.1m , typical @ VGS=10V losses are minimized due to an extremely low combin... See More ⇒

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NCEP045N85GU

NCEP045N85G NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =110A DS D switching performance. Both conduction and switching power R =3.7m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinatio... See More ⇒

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NCEP045N85GU

NCEP045N85 NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =150A DS D switching performance. Both conduction and switching power R =3.7m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinatio... See More ⇒

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NCEP045N85GU

NCEP045N10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.0m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=5.0m , typical @ VGS=4.5V losses are m... See More ⇒

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Detailed specifications: NCEP040N85MD, NCEP040NH150LL, NCEP045N10AG, NCEP045N10F, NCEP045N10G, NCEP045N10M, NCEP045N85, NCEP045N85G, 75N75, NCEP048N72, NCEP048N85, NCEP048N85D, NCEP048N85M, NCEP048N85MD, NCEP048NH150, NCEP048NH150D, NCEP048NH150T

Keywords - NCEP045N85GU MOSFET specs

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