NCEP048N72 Datasheet. Equivalente

 ..1. Size:673K  ncepower
 ncep048n72.pdf

http //www.ncepower.com NCEP048N72 NCE N-Channel Super Trench Power MOSFET Description The NCEP048N72 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switch

 6.1. Size:761K  ncepower
 ncep048n85md.pdf

NCEP048N85M, NCEP048N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =120A DS D switching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e

 6.2. Size:789K  ncepower
 ncep048nh150d.pdf

http //www.ncepower.com NCEP048NH150D NCE N-Channel Super Trench III Power MOSFET Description General Features The series of devices uses Super Trench III technology that is V =150V,I =175A DS D uniquely optimized to provide the most efficient high frequency R =3.6m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge

 6.3. Size:835K  ncepower
 ncep048n85 ncep048n85d.pdf

NCEP048N85M, NCEP048N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =120A DS D switching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e

 6.4. Size:835K  ncepower
 ncep048n85.pdf

NCEP048N85M, NCEP048N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =120A DS D switching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e

 6.5. Size:761K  ncepower
 ncep048n85m ncep048n85md.pdf

NCEP048N85M, NCEP048N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =120A DS D switching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e

 6.6. Size:761K  ncepower
 ncep048n85m.pdf

NCEP048N85M, NCEP048N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =120A DS D switching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e

 6.7. Size:806K  ncepower
 ncep048nh150t.pdf

NCEP048NH150T http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description General Features The series of devices uses Super Trench III technology that is V =150V,I =223A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =3.9m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Ex

 6.8. Size:835K  ncepower
 ncep048n85d.pdf

NCEP048N85M, NCEP048N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =120A DS D switching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e

 6.9. Size:797K  ncepower
 ncep048nh150.pdf

http //www.ncepower.com NCEP048NH150 NCE N-Channel Super Trench III Power MOSFET Description General Features The series of devices uses Super Trench III technology that is V =150V,I =175A DS D uniquely optimized to provide the most efficient high frequency R =3.9m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge