NCEP048N72
MOSFET. Datasheet pdf. Equivalent
Type Designator: NCEP048N72
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 155
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 72
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 110
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 48.8
nC
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 519
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0043
Ohm
Package:
TO-220
NCEP048N72
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCEP048N72
Datasheet (PDF)
..1. Size:673K ncepower
ncep048n72.pdf 
http://www.ncepower.comNCEP048N72NCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP048N72 uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switch
6.1. Size:761K ncepower
ncep048n85md.pdf
NCEP048N85M, NCEP048N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e
6.2. Size:789K ncepower
ncep048nh150d.pdf
http://www.ncepower.com NCEP048NH150DNCE N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench III technology that is V =150V,I =175ADS Duniquely optimized to provide the most efficient high frequencyR =3.6m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge
6.3. Size:835K ncepower
ncep048n85 ncep048n85d.pdf
NCEP048N85M, NCEP048N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e
6.4. Size:835K ncepower
ncep048n85.pdf
NCEP048N85M, NCEP048N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e
6.5. Size:761K ncepower
ncep048n85m ncep048n85md.pdf
NCEP048N85M, NCEP048N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e
6.6. Size:761K ncepower
ncep048n85m.pdf
NCEP048N85M, NCEP048N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e
6.7. Size:806K ncepower
ncep048nh150t.pdf
NCEP048NH150Thttp://www.ncepower.comNCE N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench III technology that is V =150V,I =223A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =3.9m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Ex
6.8. Size:835K ncepower
ncep048n85d.pdf
NCEP048N85M, NCEP048N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e
6.9. Size:797K ncepower
ncep048nh150.pdf
http://www.ncepower.com NCEP048NH150NCE N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench III technology that is V =150V,I =175ADS Duniquely optimized to provide the most efficient high frequencyR =3.9m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge
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