FQB50N06 Todos los transistores

 

FQB50N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQB50N06
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: TO263 D2PAK
     - Selección de transistores por parámetros

 

FQB50N06 Datasheet (PDF)

 ..1. Size:1038K  fairchild semi
 fqb50n06 fqi50n06.pdf pdf_icon

FQB50N06

October 2008QFETFQB50N06 / FQI50N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially

 ..2. Size:1062K  onsemi
 fqb50n06 fqi50n06.pdf pdf_icon

FQB50N06

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:819K  cn vbsemi
 fqb50n06.pdf pdf_icon

FQB50N06

FQB50N06www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Source

 0.1. Size:1015K  fairchild semi
 fqb50n06tm fqi50n06tu.pdf pdf_icon

FQB50N06

October 2008QFETFQB50N06 / FQI50N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially

MOSTRAR MÁS

Otros transistores... SDD03N04 , FQB34P10 , FQB34P10TMF085 , FQB44N10 , SDD02N70 , FQB47P06 , FQB4N80 , SDD02N60 , IRF630 , FQB50N06L , FQB55N10 , SDD01N70 , FQB5N50C , FQB5N90 , FQB6N80 , FCH104N60FF085 , FQB7N60 .

History: VS4020AP | 2N7075

 

 
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