All MOSFET. FQB50N06 Datasheet

 

FQB50N06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQB50N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 31 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO263 D2PAK

 FQB50N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQB50N06 Datasheet (PDF)

 ..1. Size:1038K  fairchild semi
 fqb50n06 fqi50n06.pdf

FQB50N06 FQB50N06

October 2008QFETFQB50N06 / FQI50N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially

 ..2. Size:1062K  onsemi
 fqb50n06 fqi50n06.pdf

FQB50N06 FQB50N06

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:819K  cn vbsemi
 fqb50n06.pdf

FQB50N06 FQB50N06

FQB50N06www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Source

 0.1. Size:1015K  fairchild semi
 fqb50n06tm fqi50n06tu.pdf

FQB50N06 FQB50N06

October 2008QFETFQB50N06 / FQI50N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially

 0.2. Size:1022K  fairchild semi
 fqb50n06ltm fqi50n06ltu.pdf

FQB50N06 FQB50N06

October 2008QFETFQB50N06L / FQI50N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 24.5 nC)planar stripe, DMOS technology. Low Crss ( typical 90 pF)This advanced technology has bee

 0.3. Size:1052K  fairchild semi
 fqb50n06l fqi50n06l.pdf

FQB50N06 FQB50N06

October 2008QFETFQB50N06L / FQI50N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 24.5 nC)planar stripe, DMOS technology. Low Crss ( typical 90 pF)This advanced technology has bee

Datasheet: SDD03N04 , FQB34P10 , FQB34P10TMF085 , FQB44N10 , SDD02N70 , FQB47P06 , FQB4N80 , SDD02N60 , IRFB4227 , FQB50N06L , FQB55N10 , SDD01N70 , FQB5N50C , FQB5N90 , FQB6N80 , FCH104N60FF085 , FQB7N60 .

 

 
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