NCEP050N10MD Datasheet. Equivalente

 ..1. Size:952K  ncepower
 ncep050n10md.pdf

NCEP050N10MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =123A DS D switching performance. Both conduction and switching power R =4.0m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinat

 3.1. Size:736K  ncepower
 ncep050n10m.pdf

NCEP050N10M NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =123A DS D switching performance. Both conduction and switching power R =4.2m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinati

 3.2. Size:654K  ncepower
 ncep050n10mg.pdf

NCEP050N10MG NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =120A DS D switching performance. Both conduction and switching power R =4.45m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combina

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 ncep050n12d.pdf

Pb Free Product NCEP050N12, NCEP050N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =120V,I =130A DS D uniquely optimized to provide the most efficient high frequency R =4.5m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =4.3m , typi

 5.2. Size:1315K  ncepower
 ncep050n12.pdf

Pb Free Product NCEP050N12, NCEP050N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =120V,I =130A DS D uniquely optimized to provide the most efficient high frequency R =4.5m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =4.3m , typi

 5.3. Size:323K  ncepower
 ncep050n12gu.pdf

NCEP050N12GU NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =120A switching performance. Both conduction and switching power RDS(ON)=4.6m , typical @ VGS=10V losses are minimized due to an extremely low combinatio

 5.4. Size:1315K  ncepower
 ncep050n12 ncep050n12d.pdf

Pb Free Product NCEP050N12, NCEP050N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =120V,I =130A DS D uniquely optimized to provide the most efficient high frequency R =4.5m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =4.3m , typi

 5.5. Size:304K  ncepower
 ncep050n12agu.pdf

NCEP050N12AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =120A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.7m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.0m , typical @ VGS=4.5V losses are