NCEP050N10MD - описание и поиск аналогов

NCEP050N10MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =123A DS D switching performance. Both conduction and switching power R =4.0m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinat

NCEP050N10M NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =123A DS D switching performance. Both conduction and switching power R =4.2m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinati

NCEP050N10MG NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =120A DS D switching performance. Both conduction and switching power R =4.45m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combina

Pb Free Product NCEP050N12, NCEP050N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =120V,I =130A DS D uniquely optimized to provide the most efficient high frequency R =4.5m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =4.3m , typi

Pb Free Product NCEP050N12, NCEP050N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =120V,I =130A DS D uniquely optimized to provide the most efficient high frequency R =4.5m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =4.3m , typi

NCEP050N12GU NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =120A switching performance. Both conduction and switching power RDS(ON)=4.6m , typical @ VGS=10V losses are minimized due to an extremely low combinatio

Pb Free Product NCEP050N12, NCEP050N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =120V,I =130A DS D uniquely optimized to provide the most efficient high frequency R =4.5m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =4.3m , typi

NCEP050N12AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =120A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.7m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.0m , typical @ VGS=4.5V losses are