NCEP050N85M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP050N85M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 140 W
Voltaje máximo drenador - fuente |Vds|: 85 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 115 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 70 nC
Tiempo de subida (tr): 59 nS
Conductancia de drenaje-sustrato (Cd): 650 pF
Resistencia entre drenaje y fuente RDS(on): 0.005 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET NCEP050N85M
NCEP050N85M Datasheet (PDF)
ncep050n85m.pdf
NCEP050N85M, NCEP050N85MDNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =115A switching performance. Both conduction and switching power RDS(ON)=4.7m , typical (TO-220)@ VGS=10V losses are minimized due to an e
ncep050n85 ncep050n85d.pdf
NCEP050N85, NCEP050N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =120A switching performance. Both conduction and switching power RDS(ON)=4.7m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
ncep050n85g.pdf
NCEP050N85GNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =100A switching performance. Both conduction and switching power RDS(ON)=4.6m , typical @ VGS=10V losses are minimized due to an extremely low combina
ncep050n12gu.pdf
NCEP050N12GUNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =120A switching performance. Both conduction and switching power RDS(ON)=4.6m , typical @ VGS=10V losses are minimized due to an extremely low combinatio
ncep050n10m.pdf
NCEP050N10MNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =123ADS Dswitching performance. Both conduction and switching power R =4.2m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinati
ncep050n12 ncep050n12d.pdf
Pb Free ProductNCEP050N12, NCEP050N12DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =120V,I =130ADS Duniquely optimized to provide the most efficient high frequencyR =4.5m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =4.3m , typi
ncep050n10mg.pdf
NCEP050N10MGNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combina
ncep050n10md.pdf
NCEP050N10MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =123ADS Dswitching performance. Both conduction and switching power R =4.0m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinat
ncep050n12agu.pdf
NCEP050N12AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =120A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.7m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.0m , typical @ VGS=4.5V losses are
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
