Справочник MOSFET. NCEP050N85M

 

NCEP050N85M Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP050N85M
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 140 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 115 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 70 nC
   trⓘ - Время нарастания: 59 ns
   Cossⓘ - Выходная емкость: 650 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm
   Тип корпуса: TO-220
     - подбор MOSFET транзистора по параметрам

 

NCEP050N85M Datasheet (PDF)

 ..1. Size:396K  ncepower
 ncep050n85m.pdf pdf_icon

NCEP050N85M

NCEP050N85M, NCEP050N85MDNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =115A switching performance. Both conduction and switching power RDS(ON)=4.7m , typical (TO-220)@ VGS=10V losses are minimized due to an e

 4.1. Size:396K  ncepower
 ncep050n85 ncep050n85d.pdf pdf_icon

NCEP050N85M

NCEP050N85, NCEP050N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =120A switching performance. Both conduction and switching power RDS(ON)=4.7m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 4.2. Size:395K  ncepower
 ncep050n85.pdf pdf_icon

NCEP050N85M

NCEP050N85, NCEP050N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =115A switching performance. Both conduction and switching power RDS(ON)=4.7m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 4.3. Size:395K  ncepower
 ncep050n85d.pdf pdf_icon

NCEP050N85M

NCEP050N85, NCEP050N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =115A switching performance. Both conduction and switching power RDS(ON)=4.7m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

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History: 4N65L-TF1-T | AP3N2R2MT | NTD4810N-1G | BRCS120N10SZC | SSP5N90A | MSK4N80T

 

 
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