NCEP050N85M - Даташиты. Аналоги. Основные параметры
Наименование производителя: NCEP050N85M
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 140 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 115 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 59 ns
Cossⓘ - Выходная емкость: 650 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm
Тип корпуса: TO-220
Аналог (замена) для NCEP050N85M
NCEP050N85M Datasheet (PDF)
ncep050n85m.pdf

NCEP050N85M, NCEP050N85MDNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =115A switching performance. Both conduction and switching power RDS(ON)=4.7m , typical (TO-220)@ VGS=10V losses are minimized due to an e
ncep050n85 ncep050n85d.pdf

NCEP050N85, NCEP050N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =120A switching performance. Both conduction and switching power RDS(ON)=4.7m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
ncep050n85.pdf

NCEP050N85, NCEP050N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =115A switching performance. Both conduction and switching power RDS(ON)=4.7m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
ncep050n85d.pdf

NCEP050N85, NCEP050N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =115A switching performance. Both conduction and switching power RDS(ON)=4.7m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
Другие MOSFET... NCEP050N10M , NCEP050N10MD , NCEP050N10MG , NCEP050N12 , NCEP050N12AGU , NCEP050N12D , NCEP050N12GU , NCEP050N85G , HY1906P , NCEP053N85GU , NCEP055N10 , NCEP055N10D , NCEP055N10G , NCEP055N10M , NCEP055N10U , NCEP055N12 , NCEP055N12AG .
History: IRH7054 | SSM03N70GP-H | HSSC3134
History: IRH7054 | SSM03N70GP-H | HSSC3134



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