NCEP055N10 Datasheet. Equivalente

 ..1. Size:405K  ncepower
 ncep055n10.pdf

NCEP055N10, NCEP055N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

 ..2. Size:405K  ncepower
 ncep055n10 ncep055n10d.pdf

NCEP055N10, NCEP055N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

 0.1. Size:420K  ncepower
 ncep055n10u.pdf

NCEP055N10U NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.2m , typical @ VGS=10V losses are minimized due to an extremely low combin

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 ncep055n10g.pdf

http //www.ncepower.com NCEP055N10G NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP055N10G uses Super Trench II technology that is VDS =100V,ID =105A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.9m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on

 0.3. Size:790K  ncepower
 ncep055n10m.pdf

NCEP055N10M, NCEP055N10MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =110A DS D switching performance. Both conduction and switching power R =5.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e

 0.4. Size:405K  ncepower
 ncep055n10d.pdf

NCEP055N10, NCEP055N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an ex