All MOSFET. NCEP055N10 Datasheet

 

NCEP055N10 Datasheet and Replacement


   Type Designator: NCEP055N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 61 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
   Package: TO-220
 

 NCEP055N10 substitution

   - MOSFET ⓘ Cross-Reference Search

 

NCEP055N10 Datasheet (PDF)

 ..1. Size:405K  ncepower
 ncep055n10.pdf pdf_icon

NCEP055N10

NCEP055N10, NCEP055N10DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

 ..2. Size:405K  ncepower
 ncep055n10 ncep055n10d.pdf pdf_icon

NCEP055N10

NCEP055N10, NCEP055N10DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

 0.1. Size:420K  ncepower
 ncep055n10u.pdf pdf_icon

NCEP055N10

NCEP055N10UNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.2m , typical @ VGS=10V losses are minimized due to an extremely low combin

 0.2. Size:337K  ncepower
 ncep055n10g.pdf pdf_icon

NCEP055N10

http://www.ncepower.com NCEP055N10GNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP055N10G uses Super Trench II technology that is VDS =100V,ID =105A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.9m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on

SHOW MORE

Datasheet: NCEP050N10MG , NCEP050N12 , NCEP050N12AGU , NCEP050N12D , NCEP050N12GU , NCEP050N85G , NCEP050N85M , NCEP053N85GU , AO4468 , NCEP055N10D , NCEP055N10G , NCEP055N10M , NCEP055N10U , NCEP055N12 , NCEP055N12AG , NCEP055N12D , NCEP055N12G .

History: IRFU4510 | SFP085N80DC2 | R6047ENZ1 | IPP054NE8NG | R6530ENZ1 | SML901R3AN | MSU4N60S

Keywords - NCEP055N10 MOSFET datasheet

 NCEP055N10 cross reference
 NCEP055N10 equivalent finder
 NCEP055N10 lookup
 NCEP055N10 substitution
 NCEP055N10 replacement

 

 
Back to Top

 


 
.