NCEP055N12D Todos los transistores

 

NCEP055N12D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP055N12D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 380 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
   Paquete / Cubierta: TO-263
 
   - Selección ⓘ de transistores por parámetros

 

NCEP055N12D Datasheet (PDF)

 ..1. Size:358K  ncepower
 ncep055n12d.pdf pdf_icon

NCEP055N12D

NCEP055N12,NCEP055N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =120A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=5.0m , typical (TO-263

 ..2. Size:358K  ncepower
 ncep055n12 ncep055n12d.pdf pdf_icon

NCEP055N12D

NCEP055N12,NCEP055N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =120A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=5.0m , typical (TO-263

 4.1. Size:311K  ncepower
 ncep055n12ag.pdf pdf_icon

NCEP055N12D

NCEP055N12AGNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =110A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.2m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.4m , typical @ VGS=4.5V losses are m

 4.2. Size:358K  ncepower
 ncep055n12.pdf pdf_icon

NCEP055N12D

NCEP055N12,NCEP055N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =120A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=5.0m , typical (TO-263

MOSTRAR MÁS

Otros transistores... NCEP053N85GU , NCEP055N10 , NCEP055N10D , NCEP055N10G , NCEP055N10M , NCEP055N10U , NCEP055N12 , NCEP055N12AG , IRF840 , NCEP055N12G , NCEP055N30GU , NCEP055N60GU , NCEP058N85GU , NCEP058N85M , NCEP060N10 , NCEP060N10D , NCEP060N10F .

History: SRC11N65TC

 

 
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