Справочник MOSFET. NCEP055N12D

 

NCEP055N12D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP055N12D
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 120 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 380 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0055 Ohm
   Тип корпуса: TO-263
 

 Аналог (замена) для NCEP055N12D

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEP055N12D Datasheet (PDF)

 ..1. Size:358K  ncepower
 ncep055n12d.pdf pdf_icon

NCEP055N12D

NCEP055N12,NCEP055N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =120A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=5.0m , typical (TO-263

 ..2. Size:358K  ncepower
 ncep055n12 ncep055n12d.pdf pdf_icon

NCEP055N12D

NCEP055N12,NCEP055N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =120A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=5.0m , typical (TO-263

 4.1. Size:311K  ncepower
 ncep055n12ag.pdf pdf_icon

NCEP055N12D

NCEP055N12AGNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =110A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.2m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.4m , typical @ VGS=4.5V losses are m

 4.2. Size:358K  ncepower
 ncep055n12.pdf pdf_icon

NCEP055N12D

NCEP055N12,NCEP055N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =120A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=5.0m , typical (TO-263

ПОКАЗАТЬ ЕЩЁ

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History: SSP2N60B | WMK80R160S | 2SK975 | R6035KNZ | STP6NK60Z | NCEP050N10M | IRFU3709ZC

 

 
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