NCEP058N85GU Todos los transistores

 

NCEP058N85GU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP058N85GU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 105 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 483 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0058 Ohm
   Paquete / Cubierta: DFN5X6-8L
 

 Búsqueda de reemplazo de NCEP058N85GU MOSFET

   - Selección ⓘ de transistores por parámetros

 

NCEP058N85GU Datasheet (PDF)

 ..1. Size:328K  ncepower
 ncep058n85gu.pdf pdf_icon

NCEP058N85GU

NCEP058N85GUNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =90A switching performance. Both conduction and switching power RDS(ON)=4.8m , typical@ VGS=10V losses are minimized due to an extremely low combinatio

 4.1. Size:345K  ncepower
 ncep058n85.pdf pdf_icon

NCEP058N85GU

NCEP058N85, NCEP058N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =95A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an extr

 4.2. Size:345K  ncepower
 ncep058n85d.pdf pdf_icon

NCEP058N85GU

NCEP058N85, NCEP058N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =95A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an extr

 4.3. Size:625K  ncepower
 ncep058n85m.pdf pdf_icon

NCEP058N85GU

NCEP058N85M, NCEP058N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =95ADS Dswitching performance. Both conduction and switching power R =5.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

MOSTRAR MÁS

Otros transistores... NCEP055N10M , NCEP055N10U , NCEP055N12 , NCEP055N12AG , NCEP055N12D , NCEP055N12G , NCEP055N30GU , NCEP055N60GU , 50N06 , NCEP058N85M , NCEP060N10 , NCEP060N10D , NCEP060N10F , NCEP060N10G , NCEP060N60G , NCEP063N10AGU , NCEP063N10GU .

History: FDP039N08B | APT20M34BLL | CS10N60P | FQPF10N60CT | R6035KNZ1 | ALD1106SBL | KIA3415

 

 
Back to Top

 


 
.