All MOSFET. NCEP058N85GU Datasheet

 

NCEP058N85GU Datasheet and Replacement


   Type Designator: NCEP058N85GU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 105 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 51 nC
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 483 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: DFN5X6-8L
 

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NCEP058N85GU Datasheet (PDF)

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NCEP058N85GU

NCEP058N85GUNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =90A switching performance. Both conduction and switching power RDS(ON)=4.8m , typical@ VGS=10V losses are minimized due to an extremely low combinatio

 4.1. Size:345K  ncepower
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NCEP058N85GU

NCEP058N85, NCEP058N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =95A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an extr

 4.2. Size:345K  ncepower
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NCEP058N85GU

NCEP058N85, NCEP058N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =95A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an extr

 4.3. Size:625K  ncepower
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NCEP058N85GU

NCEP058N85M, NCEP058N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =95ADS Dswitching performance. Both conduction and switching power R =5.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

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Datasheet: NCEP055N10M , NCEP055N10U , NCEP055N12 , NCEP055N12AG , NCEP055N12D , NCEP055N12G , NCEP055N30GU , NCEP055N60GU , 50N06 , NCEP058N85M , NCEP060N10 , NCEP060N10D , NCEP060N10F , NCEP060N10G , NCEP060N60G , NCEP063N10AGU , NCEP063N10GU .

History: SJMN600R70D | HSBA4052 | SI7374DP | NCE3050I

Keywords - NCEP058N85GU MOSFET datasheet

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