NCEP060N10G Todos los transistores

 

NCEP060N10G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP060N10G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 115 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 59 nS
   Cossⓘ - Capacitancia de salida: 360 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
   Paquete / Cubierta: DFN5X6-8L
 

 Búsqueda de reemplazo de NCEP060N10G MOSFET

   - Selección ⓘ de transistores por parámetros

 

NCEP060N10G Datasheet (PDF)

 ..1. Size:400K  ncepower
 ncep060n10g.pdf pdf_icon

NCEP060N10G

NCEP060N10GNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =100A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical @ VGS=10V losses are minimized due to an extremely low combin

 4.1. Size:368K  ncepower
 ncep060n10f.pdf pdf_icon

NCEP060N10G

NCEP060N10FNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =52A switching performance. Both conduction and switching power RDS(ON)=6.7m , typical @ VGS=10V losses are minimized due to an extremely low combina

 4.2. Size:398K  ncepower
 ncep060n10 ncep060n10d.pdf pdf_icon

NCEP060N10G

NCEP060N10, NCEP060N10DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =100A switching performance. Both conduction and switching power RDS(ON)=5.6m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

 4.3. Size:398K  ncepower
 ncep060n10d.pdf pdf_icon

NCEP060N10G

NCEP060N10, NCEP060N10DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =100A switching performance. Both conduction and switching power RDS(ON)=5.6m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

MOSTRAR MÁS

Otros transistores... NCEP055N12G , NCEP055N30GU , NCEP055N60GU , NCEP058N85GU , NCEP058N85M , NCEP060N10 , NCEP060N10D , NCEP060N10F , IRFP260N , NCEP060N60G , NCEP063N10AGU , NCEP063N10GU , NCEP063N85G , NCEP065N10 , NCEP065N10AG , NCEP065N10AGU , NCEP065N10AK .

History: WMO50P04T1 | SSF6N70GM

 

 
Back to Top

 


 
.