NCEP060N10G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCEP060N10G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 115 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 74 nC
   trⓘ - Tiempo de subida: 59 nS
   Cossⓘ - Capacitancia de salida: 360 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
   Paquete / Cubierta: DFN5X6-8L

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NCEP060N10G Datasheet (PDF)

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ncep060n10g.pdf

NCEP060N10GNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =100A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical @ VGS=10V losses are minimized due to an extremely low combin

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ncep060n10f.pdf

NCEP060N10FNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =52A switching performance. Both conduction and switching power RDS(ON)=6.7m , typical @ VGS=10V losses are minimized due to an extremely low combina

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ncep060n10 ncep060n10d.pdf

NCEP060N10, NCEP060N10DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =100A switching performance. Both conduction and switching power RDS(ON)=5.6m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

4.3. Size:398K ncepower
ncep060n10d.pdf