Справочник MOSFET. NCEP060N10G

 

NCEP060N10G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP060N10G
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 115 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 59 ns
   Cossⓘ - Выходная емкость: 360 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
   Тип корпуса: DFN5X6-8L
 

 Аналог (замена) для NCEP060N10G

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEP060N10G Datasheet (PDF)

 ..1. Size:400K  ncepower
 ncep060n10g.pdf pdf_icon

NCEP060N10G

NCEP060N10GNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =100A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical @ VGS=10V losses are minimized due to an extremely low combin

 4.1. Size:368K  ncepower
 ncep060n10f.pdf pdf_icon

NCEP060N10G

NCEP060N10FNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =52A switching performance. Both conduction and switching power RDS(ON)=6.7m , typical @ VGS=10V losses are minimized due to an extremely low combina

 4.2. Size:398K  ncepower
 ncep060n10 ncep060n10d.pdf pdf_icon

NCEP060N10G

NCEP060N10, NCEP060N10DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =100A switching performance. Both conduction and switching power RDS(ON)=5.6m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

 4.3. Size:398K  ncepower
 ncep060n10d.pdf pdf_icon

NCEP060N10G

NCEP060N10, NCEP060N10DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =100A switching performance. Both conduction and switching power RDS(ON)=5.6m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCEP055N12G , NCEP055N30GU , NCEP055N60GU , NCEP058N85GU , NCEP058N85M , NCEP060N10 , NCEP060N10D , NCEP060N10F , IRFP260N , NCEP060N60G , NCEP063N10AGU , NCEP063N10GU , NCEP063N85G , NCEP065N10 , NCEP065N10AG , NCEP065N10AGU , NCEP065N10AK .

History: WMO80R480S | WMK18N70EM | STB20N65M5 | WMN10N60C4 | WMO50P04T1 | NP55N055SUG | 2SJ583LS

 

 
Back to Top

 


 
.