NCEP078N10G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCEP078N10G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 53 nC
   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 290 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0078 Ohm
   Paquete / Cubierta: DFN5X6-8L

Búsqueda de reemplazo de MOSFET NCEP078N10G

NCEP078N10G Datasheet (PDF)

..1. Size:1009K ncepower
ncep078n10g.pdf

NCEP078N10GNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =75ADS Dswitching performance. Both conduction and switching power R =7.4m , typical@ V =10VDS(ON) GSlosses are minimized due to an extremely low combination

4.1. Size:462K ncepower
ncep078n10ak.pdf

NCEP078N10AKNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =75A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.2m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=9.4m , typical@ VGS=4.5V losses are minimized

4.2. Size:428K ncepower
ncep078n10ag.pdf

NCEP078N10AGNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =75A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.0m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=9.2m , typical@ VGS=4.5V losses are minimized

8.1. Size:331K ncepower
ncep075n85agu.pdf

NCEP075N85AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =75A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.6m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.6m , typical @ VGS=4.5V losses are minimiz

8.2. Size:760K ncepower
ncep075n85gu.pdf

NCEP075N85GUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =75ADS Duniquely optimized to provide the most efficient high frequencyR =5.6m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combinati

8.3. Size:305K ncepower
ncep072n10.pdf

http://www.ncepower.com NCEP072N10NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP072N10 uses Super Trench II technology that is VDS =100V,ID =90A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.8m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on) p

8.4. Size:397K ncepower
ncep070n10agu.pdf

NCEP070N10AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.35m , typical@ VGS=4.5V losses are minimiz

8.5. Size:335K ncepower
ncep070n12.pdf

NCEP070N12,NCEP070N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.3m , typical (TO-26

8.6. Size:335K ncepower
ncep070n12 ncep070n12d.pdf

8.7. Size:335K ncepower
ncep070n12d.pdf

8.8. Size:627K ncepower
ncep072n10a.pdf

http://www.ncepower.com NCEP072N10ANCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP072N10A uses Super Trench II technology that is V =100V,I =88ADS Duniquely optimized to provide the most efficient high frequency R =6.2m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =8.4m (typical) @ V =4.5VDS(ON) GS

8.9. Size:377K ncepower
ncep070n10gu.pdf

NCEP070N10GUNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =80A switching performance. Both conduction and switching power RDS(ON)=6.6m , typical@ VGS=10V losses are minimized due to an extremely low combinati

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

Liste

Recientemente añadidas las descripciónes de los transistores: