NCEP078N10G datasheet, аналоги, основные параметры
Наименование производителя: NCEP078N10G
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 100 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 290 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0078 Ohm
Тип корпуса: DFN5X6-8L
Аналог (замена) для NCEP078N10G
- подборⓘ MOSFET транзистора по параметрам
NCEP078N10G даташит
..1. Size:1009K ncepower
ncep078n10g.pdf 
NCEP078N10G NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =75A DS D switching performance. Both conduction and switching power R =7.4m , typical@ V =10V DS(ON) GS losses are minimized due to an extremely low combination
4.1. Size:462K ncepower
ncep078n10ak.pdf 
NCEP078N10AK NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =75A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.2m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=9.4m , typical@ VGS=4.5V losses are minimized
4.2. Size:428K ncepower
ncep078n10ag.pdf 
NCEP078N10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =75A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.0m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=9.2m , typical@ VGS=4.5V losses are minimized
8.1. Size:331K ncepower
ncep075n85agu.pdf 
NCEP075N85AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =75A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.6m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.6m , typical @ VGS=4.5V losses are minimiz
8.2. Size:760K ncepower
ncep075n85gu.pdf 
NCEP075N85GU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =75A DS D uniquely optimized to provide the most efficient high frequency R =5.6m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power losses are minimized due to an extremely low combinati
8.3. Size:305K ncepower
ncep072n10.pdf 
http //www.ncepower.com NCEP072N10 NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP072N10 uses Super Trench II technology that is VDS =100V,ID =90A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.8m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on) p
8.4. Size:397K ncepower
ncep070n10agu.pdf 
NCEP070N10AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.35m , typical@ VGS=4.5V losses are minimiz
8.5. Size:335K ncepower
ncep070n12.pdf 
NCEP070N12,NCEP070N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.3m , typical (TO-26
8.6. Size:335K ncepower
ncep070n12 ncep070n12d.pdf 
NCEP070N12,NCEP070N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.3m , typical (TO-26
8.7. Size:335K ncepower
ncep070n12d.pdf 
NCEP070N12,NCEP070N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.3m , typical (TO-26
8.8. Size:627K ncepower
ncep072n10a.pdf 
http //www.ncepower.com NCEP072N10A NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP072N10A uses Super Trench II technology that is V =100V,I =88A DS D uniquely optimized to provide the most efficient high frequency R =6.2m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =8.4m (typical) @ V =4.5V DS(ON) GS
8.9. Size:377K ncepower
ncep070n10gu.pdf 
NCEP070N10GU NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =80A switching performance. Both conduction and switching power RDS(ON)=6.6m , typical@ VGS=10V losses are minimized due to an extremely low combinati
Другие IGBT... NCEP070N10GU, NCEP070N12, NCEP070N12D, NCEP072N10A, NCEP075N85AGU, NCEP075N85GU, NCEP078N10AG, NCEP078N10AK, IRF4905, NCEP080N10, NCEP080N10A, NCEP080N10F, NCEP080N12, NCEP080N12D, NCEP080N12G, NCEP080N12I, NCEP080N85
