NCEP080N10F Todos los transistores

 

NCEP080N10F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP080N10F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 39 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 290 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TO-220F
 

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NCEP080N10F Datasheet (PDF)

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NCEP080N10F

NCEP080N10FNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =45A switching performance. Both conduction and switching power RDS(ON)=8.1m , typical (TO-220F)@ VGS=10V losses are minimized due to an extremely low

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NCEP080N10F

NCEP080N10NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =75A switching performance. Both conduction and switching power RDS(ON)=7.4m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely low co

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NCEP080N10F

NCEP080N10ANCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =78A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.8m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.2m , typical (TO-220)@ VGS=4.5V

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NCEP080N10F

NCEP080N12GNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =85A switching performance. Both conduction and switching power RDS(ON)=7.8m , typical @ VGS=10V losses are minimized due to an extremely low combinati

MOSTRAR MÁS

Otros transistores... NCEP072N10A , NCEP075N85AGU , NCEP075N85GU , NCEP078N10AG , NCEP078N10AK , NCEP078N10G , NCEP080N10 , NCEP080N10A , SPP20N60C3 , NCEP080N12 , NCEP080N12D , NCEP080N12G , NCEP080N12I , NCEP080N85 , NCEP080N85AK , NCEP080N85K , NCEP082N10AS .

History: RD3P130SP | MTD6P10ET4 | MTB09P03E3 | IRF7328PBF | STB200NF04-1 | SRT08N025HD | TMP4N60H

 

 
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