NCEP080N10F MOSFET Datasheet: N-Ch, 100V, 45A. Full specification with pinout and replacement list

NCEP080N10F Specs and Replacement

   Type Designator: NCEP080N10F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO-220F

NCEP080N10F substitution

- MOSFET ⓘ Cross-Reference Search

NCEP080N10F datasheet

..1. Size:395K ncepower
ncep080n10f.pdf pdf_icon

NCEP080N10F NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =45A switching performance. Both conduction and switching power RDS(ON)=8.1m , typical (TO-220F)@ VGS=10V losses are minimized due to an extremely low ... See More ⇒

4.1. Size:434K ncepower
ncep080n10.pdf pdf_icon

NCEP080N10 NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =75A switching performance. Both conduction and switching power RDS(ON)=7.4m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely low co... See More ⇒

4.2. Size:367K ncepower
ncep080n10a.pdf pdf_icon

NCEP080N10A NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =78A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.8m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.2m , typical (TO-220)@ VGS=4.5V... See More ⇒

5.1. Size:355K ncepower
ncep080n12g.pdf pdf_icon

NCEP080N12G NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =85A switching performance. Both conduction and switching power RDS(ON)=7.8m , typical @ VGS=10V losses are minimized due to an extremely low combinati... See More ⇒