NCEP080N12 Todos los transistores

 

NCEP080N12 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP080N12
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 140 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 275 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: TO-220
 

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NCEP080N12 Datasheet (PDF)

 ..1. Size:334K  ncepower
 ncep080n12 ncep080n12d.pdf pdf_icon

NCEP080N12

NCEP080N12,NCEP080N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =90A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.5m , typical (TO-263

 ..2. Size:334K  ncepower
 ncep080n12.pdf pdf_icon

NCEP080N12

NCEP080N12,NCEP080N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =90A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.5m , typical (TO-263

 0.1. Size:355K  ncepower
 ncep080n12g.pdf pdf_icon

NCEP080N12

NCEP080N12GNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =85A switching performance. Both conduction and switching power RDS(ON)=7.8m , typical @ VGS=10V losses are minimized due to an extremely low combinati

 0.2. Size:290K  ncepower
 ncep080n12i.pdf pdf_icon

NCEP080N12

NCEP080N12INCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =90A switching performance. Both conduction and switching power RDS(ON)=9.0m , typical @ VGS=10V losses are minimized due to an extremely low combinati

MOSTRAR MÁS

Otros transistores... NCEP075N85AGU , NCEP075N85GU , NCEP078N10AG , NCEP078N10AK , NCEP078N10G , NCEP080N10 , NCEP080N10A , NCEP080N10F , 8205A , NCEP080N12D , NCEP080N12G , NCEP080N12I , NCEP080N85 , NCEP080N85AK , NCEP080N85K , NCEP082N10AS , NCEP085N10AS .

History: SSP2N60B | SRC60R064S | SI9955DY | STP6NK60Z | PJF4NA65A | AUIRF7341Q | NCEP050N10M

 

 
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