Справочник MOSFET. NCEP080N12

 

NCEP080N12 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP080N12
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 140 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 120 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 90 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 16 ns
   Cossⓘ - Выходная емкость: 275 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
   Тип корпуса: TO-220
 

 Аналог (замена) для NCEP080N12

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEP080N12 Datasheet (PDF)

 ..1. Size:334K  ncepower
 ncep080n12 ncep080n12d.pdf pdf_icon

NCEP080N12

NCEP080N12,NCEP080N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =90A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.5m , typical (TO-263

 ..2. Size:334K  ncepower
 ncep080n12.pdf pdf_icon

NCEP080N12

NCEP080N12,NCEP080N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =90A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.5m , typical (TO-263

 0.1. Size:355K  ncepower
 ncep080n12g.pdf pdf_icon

NCEP080N12

NCEP080N12GNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =85A switching performance. Both conduction and switching power RDS(ON)=7.8m , typical @ VGS=10V losses are minimized due to an extremely low combinati

 0.2. Size:290K  ncepower
 ncep080n12i.pdf pdf_icon

NCEP080N12

NCEP080N12INCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =90A switching performance. Both conduction and switching power RDS(ON)=9.0m , typical @ VGS=10V losses are minimized due to an extremely low combinati

ПОКАЗАТЬ ЕЩЁ

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History: IRFF9112 | WMM240P10HG4 | KIA12N65H | IPF050N03LG | WMLL010N04LG4 | VNT009A | FQPF11N40T

 

 
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