NCEP080N85 Todos los transistores

 

NCEP080N85 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP080N85
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 393 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: TO-220
 

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NCEP080N85 Datasheet (PDF)

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NCEP080N85

NCEP080N85NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =80A switching performance. Both conduction and switching power RDS(ON)=7.5m , typical @ VGS=10V losses are minimized due to an extremely low combination

 0.1. Size:299K  ncepower
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NCEP080N85

NCEP080N85AKNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =75A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.1m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=10.0m , typical @ VGS=4.5V losses are minimiz

 0.2. Size:299K  ncepower
 ncep080n85k.pdf pdf_icon

NCEP080N85

NCEP080N85KNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =75A switching performance. Both conduction and switching power RDS(ON)=8.2m , typical @ VGS=10V losses are minimized due to an extremely low combinatio

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NCEP080N85

NCEP080N10FNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =45A switching performance. Both conduction and switching power RDS(ON)=8.1m , typical (TO-220F)@ VGS=10V losses are minimized due to an extremely low

MOSTRAR MÁS

Otros transistores... NCEP078N10G , NCEP080N10 , NCEP080N10A , NCEP080N10F , NCEP080N12 , NCEP080N12D , NCEP080N12G , NCEP080N12I , IRFB3607 , NCEP080N85AK , NCEP080N85K , NCEP082N10AS , NCEP085N10AS , NCEP088NH150GU , NCEP090N10AGU , NCEP090N10GU , NCEP090N12AGU .

 

 
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