NCEP080N85 Datasheet: MOSFET, N-Ch, 85V, 80A. Full specification with pinout and replacement list

NCEP080N85 Datasheet. Specs and Replacement

Type Designator: NCEP080N85

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 393 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO-220

NCEP080N85 substitution

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NCEP080N85 datasheet

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NCEP080N85 NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =80A switching performance. Both conduction and switching power RDS(ON)=7.5m , typical @ VGS=10V losses are minimized due to an extremely low combination... See More ⇒

0.1. Size:299K ncepower
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NCEP080N85AK NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =75A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.1m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=10.0m , typical @ VGS=4.5V losses are minimiz... See More ⇒

0.2. Size:299K ncepower
ncep080n85k.pdf pdf_icon

NCEP080N85K NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =75A switching performance. Both conduction and switching power RDS(ON)=8.2m , typical @ VGS=10V losses are minimized due to an extremely low combinatio... See More ⇒

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NCEP080N10F NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =45A switching performance. Both conduction and switching power RDS(ON)=8.1m , typical (TO-220F)@ VGS=10V losses are minimized due to an extremely low ... See More ⇒