NCEP092N10AS Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP092N10AS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 3.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 11 nS
Cossⓘ - Capacitancia de salida: 315 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Encapsulados: SOP8
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NCEP092N10AS datasheet
..1. Size:367K ncepower
ncep092n10as.pdf 
NCEP092N10AS NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =14A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.4m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=10.0m , typical@ VGS=4.5V losses are minimize
8.1. Size:782K ncepower
ncep090n20t.pdf
NCEP090N20T NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =200V,I =125A DS D switching performance. Both conduction and switching power R =7.5m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinati
8.2. Size:331K ncepower
ncep090n85gu.pdf
http //www.ncepower.com NCEP090N85GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85GU uses Super Trench II technology that is VDS =85V,ID =62A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.3m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on
8.3. Size:1292K ncepower
ncep090n20 ncep090n20d.pdf
NCEP090N20,NCEP090N20D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =200V,I =125A DS D uniquely optimized to provide the most efficient high frequency R =7.7m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =7.5m , typical (TO-263)@ V =1
8.4. Size:881K ncepower
ncep090n85qu.pdf
Pb Free Product http //www.ncepower.com NCEP090N85QU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85QU uses Super Trench II technology that is V =85V,I =56A DS D uniquely optimized to provide the most efficient high frequency R =8.2m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate
8.5. Size:297K ncepower
ncep090n85a.pdf
http //www.ncepower.com NCEP090N85A NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85A uses Super Trench II technology that is VDS =85V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=11.8m (typical) @ VGS=4.5V loss
8.6. Size:706K ncepower
ncep090n85aqu.pdf
http //www.ncepower.com NCEP090N85AQU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85AQU uses Super Trench II technology that V =85V,I =56A DS D is uniquely optimized to provide the most efficient high R =8.5m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =11.5m (typical) @ V =4.5V DS(ON) GS switching
8.7. Size:332K ncepower
ncep095n10ag.pdf
NCEP095N10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =60A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=10.5m , typical@ VGS=4.5V losses are mi
8.8. Size:329K ncepower
ncep090n85agu.pdf
http //www.ncepower.com NCEP090N85AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85AGU uses Super Trench II technology that VDS =85V,ID =62A is uniquely optimized to provide the most efficient high RDS(ON)=7.7m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=10.4m (typical) @ VGS=4.5V switching power
8.9. Size:302K ncepower
ncep095n10.pdf
NCEP095N10 NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =65A switching performance. Both conduction and switching power RDS(ON)=8.5m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely low co
8.10. Size:334K ncepower
ncep090n10gu.pdf
NCEP090N10GU NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =65A switching performance. Both conduction and switching power RDS(ON)=7.0m , typical@ VGS=10V losses are minimized due to an extremely low combinati
8.11. Size:1292K ncepower
ncep090n20d.pdf
NCEP090N20,NCEP090N20D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =200V,I =125A DS D uniquely optimized to provide the most efficient high frequency R =7.7m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =7.5m , typical (TO-263)@ V =1
8.12. Size:340K ncepower
ncep090n12agu.pdf
NCEP090N12AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.7m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=9.5m , typical @ VGS=4.5V losses are
8.13. Size:683K ncepower
ncep095n10a.pdf
NCEP095N10A NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =65A DS D uniquely optimized to provide the most efficient high frequency R =9m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =11m , typical@ V =4.5V DS(ON) GS losses are minimi
8.14. Size:333K ncepower
ncep090n10agu.pdf
NCEP090N10AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =65A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.0m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=10m , typical@ VGS=4.5V losses are min
8.15. Size:1292K ncepower
ncep090n20.pdf
NCEP090N20,NCEP090N20D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =200V,I =125A DS D uniquely optimized to provide the most efficient high frequency R =7.7m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =7.5m , typical (TO-263)@ V =1
Otros transistores... NCEP090N20, NCEP090N20D, NCEP090N20T, NCEP090N85A, NCEP090N85AGU, NCEP090N85AQU, NCEP090N85GU, NCEP090N85QU, 4N60, NCEP095N10, NCEP095N10A, NCEP095N10AG, NCEP10N12, NCEP10N12AK, NCEP10N12D, NCEP10N12G, NCEP10N12K
