NCEP092N10AS MOSFET. Datasheet pdf. Equivalent
Type Designator: NCEP092N10AS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 14 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 70 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 315 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: SOP8
NCEP092N10AS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCEP092N10AS Datasheet (PDF)
ncep092n10as.pdf
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NCEP092N10ASNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =14A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.4m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=10.0m , typical@ VGS=4.5V losses are minimize
ncep090n20t.pdf
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NCEP090N20TNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =200V,I =125ADS Dswitching performance. Both conduction and switching power R =7.5m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinati
ncep090n85gu.pdf
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http://www.ncepower.com NCEP090N85GUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85GU uses Super Trench II technology that is VDS =85V,ID =62A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.3m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on
ncep090n20 ncep090n20d.pdf
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NCEP090N20,NCEP090N20DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =200V,I =125ADS Duniquely optimized to provide the most efficient high frequencyR =7.7m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =7.5m , typical (TO-263)@ V =1
ncep090n85qu.pdf
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Pb Free Producthttp://www.ncepower.com NCEP090N85QUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP090N85QU uses Super Trench II technology that is V =85V,I =56ADS Duniquely optimized to provide the most efficient high frequencyR =8.2m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate
ncep090n85a.pdf
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http://www.ncepower.com NCEP090N85ANCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85A uses Super Trench II technology that is VDS =85V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=11.8m (typical) @ VGS=4.5V loss
ncep090n85aqu.pdf
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http://www.ncepower.com NCEP090N85AQUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP090N85AQU uses Super Trench II technology that V =85V,I =56ADS Dis uniquely optimized to provide the most efficient high R =8.5m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =11.5m (typical) @ V =4.5VDS(ON) GSswitching
ncep095n10ag.pdf
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NCEP095N10AGNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =60A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=10.5m , typical@ VGS=4.5V losses are mi
ncep090n85agu.pdf
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http://www.ncepower.com NCEP090N85AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85AGU uses Super Trench II technology that VDS =85V,ID =62A is uniquely optimized to provide the most efficient high RDS(ON)=7.7m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=10.4m (typical) @ VGS=4.5V switching power
ncep095n10.pdf
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NCEP095N10NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =65A switching performance. Both conduction and switching power RDS(ON)=8.5m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely low co
ncep090n10gu.pdf
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NCEP090N10GUNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =65A switching performance. Both conduction and switching power RDS(ON)=7.0m , typical@ VGS=10V losses are minimized due to an extremely low combinati
ncep090n12agu.pdf
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NCEP090N12AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.7m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=9.5m , typical @ VGS=4.5V losses are
ncep095n10a.pdf
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NCEP095N10ANCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =65ADS Duniquely optimized to provide the most efficient high frequencyR =9m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =11m , typical@ V =4.5VDS(ON) GSlosses are minimi
ncep090n10agu.pdf
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NCEP090N10AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =65A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.0m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=10m , typical@ VGS=4.5V losses are min
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: SM1660DSCS