FQB7N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQB7N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 142 W
Tensión drenaje-fuente (Vds): 600 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 7.4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Carga de compuerta (Qg): 29 nC
Resistencia drenaje-fuente RDS(on): 1 Ohm
Empaquetado / Estuche: TO263, D2PAK
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FQB7N60 Datasheet (PDF)
1.1. fqb7n60tm fqb7n60 fqi7n60 fqi7n60tu.pdf 
Size:651K _fairchild_semi
October 2008 QFET® FQB7N60 / FQI7N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.4A, 600V, RDS(on) = 1.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 29 nC) planar stripe, DMOS technology. • Low Crss ( typical 16 pF) This advanced technology has been especially
4.1. fqb7n65ctm.pdf Size:1031K _fairchild_semi
October 2008 QFET® FQB7N65C 650V N-Channel MOSFET Features Description • 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect • Low gate charge ( typical 28 nC) transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Crss ( typical 12 pF) This advanced technology has been especially tailored to • Fa
5.1. fqb7n80tm am002 fqi7n80tu fqi7n80 fqb7n80.pdf Size:836K _fairchild_semi
October 2008 QFET® FQB7N80 / FQI7N80 800V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 6.6A, 800V, RDS(on) = 1.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 40 nC) planar stripe, DMOS technology. • Low Crss ( typical 19 pF) This advanced technology has been especially
5.2. fqb7n30tm.pdf Size:735K _fairchild_semi
April 2000 TM QFET QFET QFET QFET FQB7N30 / FQI7N30 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 7A, 300V, RDS(on) = 0.7Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 12 pF) This advanced technology has
5.3. fqb7n20ltm.pdf Size:567K _fairchild_semi
December 2000 TM QFET QFET QFET QFET FQB7N20L / FQI7N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 6.5A, 200V, RDS(on) = 0.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.5 pF) This advanced
5.4. fqb7n10ltm fqi7n10ltu.pdf Size:554K _fairchild_semi
December 2000 TM QFET QFET QFET QFET FQB7N10L / FQI7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.3A, 100V, RDS(on) = 0.35Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. • Low Crss ( typical 12 pF) This advanced
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