All MOSFET. FQB7N60 Datasheet

 

FQB7N60 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQB7N60

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 142 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 7.4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 29 nC

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: TO263 D2PAK

FQB7N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQB7N60 Datasheet (PDF)

0.1. fqb7n60tm fqb7n60 fqi7n60 fqi7n60tu.pdf Size:651K _fairchild_semi

FQB7N60
FQB7N60

October 2008QFETFQB7N60 / FQI7N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.4A, 600V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology has been especially

8.1. fqb7n65ctm.pdf Size:1031K _fairchild_semi

FQB7N60
FQB7N60

October 2008QFETFQB7N65C650V N-Channel MOSFETFeatures Description 7A, 650V, RDS(on) = 1.4 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 28 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to Fa

 9.1. fqb7n80tm am002 fqi7n80tu fqi7n80 fqb7n80.pdf Size:836K _fairchild_semi

FQB7N60
FQB7N60

October 2008QFETFQB7N80 / FQI7N80800V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 19 pF)This advanced technology has been especially

9.2. fqb7n30tm.pdf Size:735K _fairchild_semi

FQB7N60
FQB7N60

April 2000TMQFETQFETQFETQFETFQB7N30 / FQI7N30300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7A, 300V, RDS(on) = 0.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has

 9.3. fqb7n20ltm.pdf Size:567K _fairchild_semi

FQB7N60
FQB7N60

December 2000TMQFETQFETQFETQFETFQB7N20L / FQI7N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.5A, 200V, RDS(on) = 0.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.8 nC)planar stripe, DMOS technology. Low Crss ( typical 8.5 pF)This advanced

9.4. fqb7n10ltm fqi7n10ltu.pdf Size:554K _fairchild_semi

FQB7N60
FQB7N60

December 2000TMQFETQFETQFETQFETFQB7N10L / FQI7N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.3A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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