FQB7N60
MOSFET. Datasheet pdf. Equivalent
Type Designator: FQB7N60
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 142
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 7.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 29
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1
Ohm
Package:
TO263
D2PAK
FQB7N60
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQB7N60
Datasheet (PDF)
..1. Size:651K fairchild semi
fqb7n60tm fqb7n60 fqi7n60 fqi7n60tu.pdf 
October 2008QFETFQB7N60 / FQI7N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.4A, 600V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology has been especially
..2. Size:770K onsemi
fqb7n60 fqi7n60.pdf
FQB7N60 / FQI7N60N-Channel QFET MOSFET600 V, 7.4 A, 1.0 Features 7.4 A, 600 V, RDS(on) = 1.0 (Max.) @VGS = 10 V,Description ID = 3.7 AThis N-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 29 nC)produced using ON Semiconductors proprietary Low Crss (Typ. 16 pF)planar stripe and DMOS technology. This advanced MOSFET technology has been
8.1. Size:1031K fairchild semi
fqb7n65ctm.pdf
October 2008QFETFQB7N65C650V N-Channel MOSFETFeatures Description 7A, 650V, RDS(on) = 1.4 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 28 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to Fa
9.1. Size:735K fairchild semi
fqb7n30tm.pdf
April 2000TMQFETQFETQFETQFETFQB7N30 / FQI7N30300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7A, 300V, RDS(on) = 0.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has
9.2. Size:836K fairchild semi
fqb7n80tm am002 fqi7n80tu fqi7n80 fqb7n80.pdf
October 2008QFETFQB7N80 / FQI7N80800V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 19 pF)This advanced technology has been especially
9.3. Size:554K fairchild semi
fqb7n10ltm fqi7n10ltu.pdf
December 2000TMQFETQFETQFETQFETFQB7N10L / FQI7N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.3A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced
9.4. Size:567K fairchild semi
fqb7n20ltm.pdf
December 2000TMQFETQFETQFETQFETFQB7N20L / FQI7N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.5A, 200V, RDS(on) = 0.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.8 nC)planar stripe, DMOS technology. Low Crss ( typical 8.5 pF)This advanced
Datasheet: FQB50N06
, FQB50N06L
, FQB55N10
, SDD01N70
, FQB5N50C
, FQB5N90
, FQB6N80
, FCH104N60FF085
, AON7408
, FCPF2250N80Z
, FQB7P20
, FQB7P20TMF085
, FQB8N60C
, FCH072N60FF085
, FQB8P10
, FQB9N50C
, FQD10N20C
.
