All MOSFET. FQB7N60 Datasheet

 

FQB7N60 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQB7N60

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 142 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 7.4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 29 nC

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: TO263, D2PAK

FQB7N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQB7N60 Datasheet (PDF)

0.1. fqb7n60tm fqb7n60 fqi7n60 fqi7n60tu.pdf Size:651K _fairchild_semi

FQB7N60
FQB7N60

October 2008 QFET® FQB7N60 / FQI7N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.4A, 600V, RDS(on) = 1.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 29 nC) planar stripe, DMOS technology. • Low Crss ( typical 16 pF) This advanced technology has been especially

8.1. fqb7n65ctm.pdf Size:1031K _fairchild_semi

FQB7N60
FQB7N60

October 2008 QFET® FQB7N65C 650V N-Channel MOSFET Features Description • 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect • Low gate charge ( typical 28 nC) transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Crss ( typical 12 pF) This advanced technology has been especially tailored to • Fa

 9.1. fqb7n80tm am002 fqi7n80tu fqi7n80 fqb7n80.pdf Size:836K _fairchild_semi

FQB7N60
FQB7N60

October 2008 QFET® FQB7N80 / FQI7N80 800V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 6.6A, 800V, RDS(on) = 1.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 40 nC) planar stripe, DMOS technology. • Low Crss ( typical 19 pF) This advanced technology has been especially

9.2. fqb7n30tm.pdf Size:735K _fairchild_semi

FQB7N60
FQB7N60

April 2000 TM QFET QFET QFET QFET FQB7N30 / FQI7N30 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 7A, 300V, RDS(on) = 0.7Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 12 pF) This advanced technology has

 9.3. fqb7n20ltm.pdf Size:567K _fairchild_semi

FQB7N60
FQB7N60

December 2000 TM QFET QFET QFET QFET FQB7N20L / FQI7N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 6.5A, 200V, RDS(on) = 0.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.5 pF) This advanced

9.4. fqb7n10ltm fqi7n10ltu.pdf Size:554K _fairchild_semi

FQB7N60
FQB7N60

December 2000 TM QFET QFET QFET QFET FQB7N10L / FQI7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.3A, 100V, RDS(on) = 0.35Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. • Low Crss ( typical 12 pF) This advanced

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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