NCEP11N12AGU Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP11N12AGU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 85 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 120 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 57 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm

Encapsulados: DFN5X6-8L

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NCEP11N12AGU datasheet

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NCEP11N12AGU

NCEP11N12AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =57A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.5m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=12.5m , typical@ VGS=4.5V losses are mi

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NCEP11N12AGU

NCEP11N10AS NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =12A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.1m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=12m , typical@ VGS=4.5V losses are minim

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NCEP11N12AGU

http //www.ncepower.com NCEP11N10AQU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AQU uses Super Trench II technology that is V =100V,I =55A DS D uniquely optimized to provide the most efficient high frequency R =10.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =13.5m (typical) @ V =4.5V DS(ON

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NCEP11N12AGU

http //www.ncepower.com NCEP11N10AK NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AK uses Super Trench II technology that is VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=11.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=14.5m (typical) @ VGS=4.5V lo

MOSTRAR MÁS

Otros transistores... NCEP10N12G, NCEP10N12K, NCEP10N85AG, NCEP10N85AQ, NCEP11N10AGU, NCEP11N10AK, NCEP11N10AQU, NCEP11N10AS, 2N60, NCEP1212AS, NCEP1214AS, NCEP1216AS, NCEP1250AK, NCEP1260F, NCEP1278, NCEP1290AK, NCEP12N10AQ