All MOSFET. NCEP11N12AGU Datasheet

 

NCEP11N12AGU Datasheet and Replacement


   Type Designator: NCEP11N12AGU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 57 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: DFN5X6-8L
 

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NCEP11N12AGU Datasheet (PDF)

 ..1. Size:333K  ncepower
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NCEP11N12AGU

NCEP11N12AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =57A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.5m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=12.5m , typical@ VGS=4.5V losses are mi

 6.1. Size:302K  ncepower
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NCEP11N12AGU

NCEP11N10ASNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =12A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.1m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=12m , typical@ VGS=4.5V losses are minim

 6.2. Size:717K  ncepower
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NCEP11N12AGU

http://www.ncepower.com NCEP11N10AQUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP11N10AQU uses Super Trench II technology that is V =100V,I =55ADS Duniquely optimized to provide the most efficient high frequency R =10.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =13.5m (typical) @ V =4.5VDS(ON

 6.3. Size:363K  ncepower
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NCEP11N12AGU

http://www.ncepower.com NCEP11N10AKNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AK uses Super Trench II technology that is VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=11.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=14.5m (typical) @ VGS=4.5V lo

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Datasheet: NCEP10N12G , NCEP10N12K , NCEP10N85AG , NCEP10N85AQ , NCEP11N10AGU , NCEP11N10AK , NCEP11N10AQU , NCEP11N10AS , IRF830 , NCEP1212AS , NCEP1214AS , NCEP1216AS , NCEP1250AK , NCEP1260F , NCEP1278 , NCEP1290AK , NCEP12N10AQ .

History: IXTP52P10P | IPL65R420E6 | NCE2301C | KMA5D8DP20Q | HCA60R040 | MTB06N03E3

Keywords - NCEP11N12AGU MOSFET datasheet

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