NCEP1545A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP1545A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 120 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 45 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6.5 nS

Cossⓘ - Capacitancia de salida: 145 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm

Encapsulados: TO-220

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NCEP1545A datasheet

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NCEP1545A

http //www.ncepower.com NCEP1545A NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1545AK uses Super Trench technology that is V =150V,I =45A DS D uniquely optimized to provide the most efficient high R =22m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =28m (typical) @ V =4.5V DS(ON) GS switching power losses ar

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NCEP1545A

http //www.ncepower.com NCEP1545AG NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1545AG uses Super Trench technology that is VDS =150V,ID =45A uniquely optimized to provide the most efficient high RDS(ON)=26m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=30m (typical) @ VGS=4.5V switching power losses are mi

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NCEP1545A

http //www.ncepower.com NCEP1545AK NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1545AK uses Super Trench technology that is V =150V,I =45A DS D uniquely optimized to provide the most efficient high R =26m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =30m (typical) @ V =4.5V DS(ON) GS switching power losses a

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NCEP1545A

Pb Free Product http //www.ncepower.com NCEP1545K NCE N-Channel Super Trench Power MOSFET Description The NCEP1545K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

MOSTRAR MÁS

Otros transistores... NCEP12T13A, NCEP12T15, NCEP12T18, NCEP13N10AS, NCEP1505S, NCEP1520AK, NCEP1520BK, NCEP1520G, IRFP064N, NCEP1545AG, NCEP1545AK, NCEP1570GU, NCEP1575GU, NCEP1580D, NCEP1580GU, NCEP15P30A, NCEP15P30AK