NCEP1545A datasheet, аналоги, основные параметры

Наименование производителя: NCEP1545A

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 120 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 45 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 6.5 ns

Cossⓘ - Выходная емкость: 145 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.035 Ohm

Тип корпуса: TO-220

Аналог (замена) для NCEP1545A

- подборⓘ MOSFET транзистора по параметрам

 

NCEP1545A даташит

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NCEP1545A

http //www.ncepower.com NCEP1545A NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1545AK uses Super Trench technology that is V =150V,I =45A DS D uniquely optimized to provide the most efficient high R =22m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =28m (typical) @ V =4.5V DS(ON) GS switching power losses ar

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NCEP1545A

http //www.ncepower.com NCEP1545AG NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1545AG uses Super Trench technology that is VDS =150V,ID =45A uniquely optimized to provide the most efficient high RDS(ON)=26m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=30m (typical) @ VGS=4.5V switching power losses are mi

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NCEP1545A

http //www.ncepower.com NCEP1545AK NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1545AK uses Super Trench technology that is V =150V,I =45A DS D uniquely optimized to provide the most efficient high R =26m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =30m (typical) @ V =4.5V DS(ON) GS switching power losses a

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NCEP1545A

Pb Free Product http //www.ncepower.com NCEP1545K NCE N-Channel Super Trench Power MOSFET Description The NCEP1545K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

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