2SK3069 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK3069 Silicon N Channel MOS FET High Speed Power Switching REJ03G1062-1100 (Previous: ADE-208-694I) Rev.11.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 6 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D1. Gate2. Drain(Flange)G3. Source

isc N-Channel MOSFET Transistor 2SK3069FEATURESDrain Current : I = 75A@ T =25D CDrain Source Voltage: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3060SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK3060 is N-Channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching applications.2SK3060 TO-220AB2SK3060-S TO-262FEATURES Low on-state resistance2SK3060-ZJ TO-263RDS(on)1 = 13 m MAX. (VGS = 10 V, ID

2SK3068 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3068 Chopper Regulator DC-DC Converter, and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 0.4 (typ.) High forward transfer admittance : |Yfs| = 9.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 500 V) Enhancement mode : Vth = 2.0~4.0 V (VDS =

2SK3065TransistorsSmall switching (60V, 2A)2SK3065 Features External dimensions (Units : mm)1) Low on resistance.2) High-speed switching.4.5+0.2-0.11.60.1 1.50.13) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation).4) Driving circuit is easy.(1) (2) (3)0.4+0.1-0.055) Easy to use parallel.0.40.1 0.50.1 0.40.11.50.

2SK3065TransistorsSmall switching (60V, 2A)2SK3065 Features External dimensions (Units : mm)1) Low on resistance.2) High-speed switching.4.5+0.2-0.11.60.1 1.50.13) Optimum for a pocket resource etc. because ofundervoltage actuation (2.5V actuation).4) Driving circuit is easy.(1) (2) (3)0.4+0.1-0.055) Easy to use parallel.0.40.1 0.50.1 0.40.11.50.1

2SK3065TransistorsSmall switching (60V, 2A)2SK3065 Features External dimensions (Units : mm)1) Low on resistance.2) High-speed switching.4.5+0.2-0.11.60.1 1.50.13) Optimum for a pocket resource etc. because ofundervoltage actuation (2.5V actuation).4) Driving circuit is easy.(1) (2) (3)0.4+0.1-0.055) Easy to use parallel.0.40.1 0.50.1 0.40.11.50.1

This product complies with the RoHS Directive (EU 2002/95/EC).Silicon MOSFETs (Small Signal)2SK3064Silicon N-channel MOSFETUnit: mmFor switching circuit0.15+0.100.3+0.10.050.0For rechargeable buttery pack (Li+ ion buttery, etc.)3 Features High gate-source voltage (Drain open) VGSO1 2 Low gate threshold voltage Vth(0.65) (0.65)1.30.12.00.2

isc N-Channel MOSFET Transistor 2SK3060-ZFEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK3068BFEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.52(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK3060-SFEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK3060-ZJFEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK3068KFEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.52(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK3067FEATURESDrain Current : I = 2A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 5(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

isc N-Channel MOSFET Transistor 2SK3060FEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d