2SK3069 - описание и поиск аналогов

 ..1. Size:87K  renesas
 2sk3069.pdf 

2SK3069 Silicon N Channel MOS FET High Speed Power Switching REJ03G1062-1100 (Previous ADE-208-694I) Rev.11.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 6 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate 2. Drain (Flange) G 3. Source

 ..2. Size:289K  inchange semiconductor
 2sk3069.pdf 

isc N-Channel MOSFET Transistor 2SK3069 FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V =60V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 0.1. Size:101K  renesas
 rej03g1062 2sk3069ds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:81K  1
 2sk3060.pdf 

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3060 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3060 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3060 TO-220AB 2SK3060-S TO-262 FEATURES Low on-state resistance 2SK3060-ZJ TO-263 RDS(on)1 = 13 m MAX. (VGS = 10 V, ID

 8.2. Size:141K  toshiba
 2sk3067.pdf 

 8.3. Size:759K  toshiba
 2sk3068.pdf 

2SK3068 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3068 Chopper Regulator DC-DC Converter, and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.4 (typ.) High forward transfer admittance Yfs = 9.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 4.0 V (VDS =

 8.4. Size:83K  renesas
 2sk3065t100.pdf 

2SK3065 Transistors Small switching (60V, 2A) 2SK3065 Features External dimensions (Units mm) 1) Low on resistance. 2) High-speed switching. 4.5+0.2 -0.1 1.6 0.1 1.5 0.1 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. (1) (2) (3) 0.4+0.1 -0.05 5) Easy to use parallel. 0.4 0.1 0.5 0.1 0.4 0.1 1.5 0.

 8.5. Size:85K  rohm
 2sk3065.pdf 

2SK3065 Transistors Small switching (60V, 2A) 2SK3065 Features External dimensions (Units mm) 1) Low on resistance. 2) High-speed switching. 4.5+0.2 -0.1 1.6 0.1 1.5 0.1 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. (1) (2) (3) 0.4+0.1 -0.05 5) Easy to use parallel. 0.4 0.1 0.5 0.1 0.4 0.1 1.5 0.1

 8.6. Size:59K  rohm
 2sk3065 ke sot89.pdf 

2SK3065 Transistors Small switching (60V, 2A) 2SK3065 Features External dimensions (Units mm) 1) Low on resistance. 2) High-speed switching. 4.5+0.2 -0.1 1.6 0.1 1.5 0.1 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. (1) (2) (3) 0.4+0.1 -0.05 5) Easy to use parallel. 0.4 0.1 0.5 0.1 0.4 0.1 1.5 0.1

 8.7. Size:100K  panasonic
 2sk3064.pdf 

This product complies with the RoHS Directive (EU 2002/95/EC). Silicon MOSFETs (Small Signal) 2SK3064 Silicon N-channel MOSFET Unit mm For switching circuit 0.15+0.10 0.3+0.1 0.05 0.0 For rechargeable buttery pack (Li+ ion buttery, etc.) 3 Features High gate-source voltage (Drain open) VGSO 1 2 Low gate threshold voltage Vth (0.65) (0.65) 1.3 0.1 2.0 0.2

 8.8. Size:357K  inchange semiconductor
 2sk3060-z.pdf 

isc N-Channel MOSFET Transistor 2SK3060-Z FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.9. Size:357K  inchange semiconductor
 2sk3068b.pdf 

isc N-Channel MOSFET Transistor 2SK3068B FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.52 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.10. Size:283K  inchange semiconductor
 2sk3060-s.pdf 

isc N-Channel MOSFET Transistor 2SK3060-S FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.11. Size:357K  inchange semiconductor
 2sk3060-zj.pdf 

isc N-Channel MOSFET Transistor 2SK3060-ZJ FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.12. Size:283K  inchange semiconductor
 2sk3068k.pdf 

isc N-Channel MOSFET Transistor 2SK3068K FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.52 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.13. Size:279K  inchange semiconductor
 2sk3067.pdf 

isc N-Channel MOSFET Transistor 2SK3067 FEATURES Drain Current I = 2A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 5 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

 8.14. Size:289K  inchange semiconductor
 2sk3060.pdf 

isc N-Channel MOSFET Transistor 2SK3060 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage V =60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d