FQB8N60C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQB8N60C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 147 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
Paquete / Cubierta: TO263 D2PAK
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FQB8N60C Datasheet (PDF)
fqb8n60c fqi8n60c fqi8n60ctu.pdf

October 2008QFETFQB8N60C / FQI8N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especiall
fqb8n60c fqi8n60c.pdf

FQB8N60C / FQI8N60CN-Channel QFET MOSFET600 V, 7.5 A, 1.2 Features 7.5 A, 600 V, RDS(on) = 1.2 (Max.) @ VGS = 10 V,ID = 3.75 ADescription Low Gate Charge (Typ. 28 nC)This N-Channel enhancement mode power MOSFET is produced using ON Semiconductors proprietary planar Low Crss (Typ. 12 pF)stripe and DMOS technology. This advanced MOSFET technology has
fqb8n60cf fqb8n60cftm.pdf

October 2008TMQFETFQB8N60CF600V N-Channel MOSFETFeatures Description 6.26A, 600V, RDS(on) = 1.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 28nC)DMOS technology. Low Crss ( typical 12pF)This advanced technology has been especially tailored to
fqb8n25tm.pdf

May 2000TMQFETQFETQFETQFETFQB8N25 / FQI8N25250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.0A, 250V, RDS(on) = 0.55 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has
Otros transistores... FQB5N50C , FQB5N90 , FQB6N80 , FCH104N60FF085 , FQB7N60 , FCPF2250N80Z , FQB7P20 , FQB7P20TMF085 , IRFP260 , FCH072N60FF085 , FQB8P10 , FQB9N50C , FQD10N20C , FDMC8321LDC , FQD10N20L , FDPF041N06BL1 , FQD11P06 .
History: ITF87068SQT | IXFN39N90 | 2N6802 | FCPF2250N80Z | 2SK3850 | 2N6968
History: ITF87068SQT | IXFN39N90 | 2N6802 | FCPF2250N80Z | 2SK3850 | 2N6968



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