All MOSFET. FQB8N60C Datasheet

 

FQB8N60C MOSFET. Datasheet pdf. Equivalent

Type Designator: FQB8N60C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 147 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 7.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 28 nC

Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm

Package: TO263, D2PAK

FQB8N60C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQB8N60C Datasheet (PDF)

0.1. fqb8n60cf fqb8n60cftm.pdf Size:1032K _fairchild_semi

FQB8N60C
FQB8N60C

October 2008 TM QFET FQB8N60CF 600V N-Channel MOSFET Features Description • 6.26A, 600V, RDS(on) = 1.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( typical 28nC) DMOS technology. • Low Crss ( typical 12pF) This advanced technology has been especially tailored to

0.2. fqb8n60c fqi8n60c fqi8n60ctu.pdf Size:965K _fairchild_semi

FQB8N60C
FQB8N60C

October 2008 QFET® FQB8N60C / FQI8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 28 nC) planar stripe, DMOS technology. • Low Crss ( typical 12 pF) This advanced technology has been especiall

 9.1. fqb8n25tm.pdf Size:594K _fairchild_semi

FQB8N60C
FQB8N60C

May 2000 TM QFET QFET QFET QFET FQB8N25 / FQI8N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 8.0A, 250V, RDS(on) = 0.55Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 11 pF) This advanced technology has

9.2. fqb8n90ctm.pdf Size:430K _fairchild_semi

FQB8N60C
FQB8N60C

December 2013 FQB8N90C N-Channel QFET® MOSFET 900 V, 6.3 A, 1.9 Ω Description Features These N-Channel enhancement mode power field effect • 6.3 A, 900 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V transistors are produced using Fairchild’s proprietary, planar • Low Gate Charge (Typ. 35 nC) stripe, DMOS technology. This advanced technology has been • Low Crss (Typ. 12 pF) especia

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top