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FQB8N60C Specs and Replacement


   Type Designator: FQB8N60C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO263 D2PAK
 

 FQB8N60C substitution

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FQB8N60C Specs

 ..1. Size:965K  fairchild semi
fqb8n60c fqi8n60c fqi8n60ctu.pdf pdf_icon

FQB8N60C

October 2008 QFET FQB8N60C / FQI8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especiall... See More ⇒

 ..2. Size:754K  onsemi
fqb8n60c fqi8n60c.pdf pdf_icon

FQB8N60C

FQB8N60C / FQI8N60C N-Channel QFET MOSFET 600 V, 7.5 A, 1.2 Features 7.5 A, 600 V, RDS(on) = 1.2 (Max.) @ VGS = 10 V, ID = 3.75 A Description Low Gate Charge (Typ. 28 nC) This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar Low Crss (Typ. 12 pF) stripe and DMOS technology. This advanced MOSFET technology has... See More ⇒

 0.1. Size:1032K  fairchild semi
fqb8n60cf fqb8n60cftm.pdf pdf_icon

FQB8N60C

October 2008 TM QFET FQB8N60CF 600V N-Channel MOSFET Features Description 6.26A, 600V, RDS(on) = 1.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 28nC) DMOS technology. Low Crss ( typical 12pF) This advanced technology has been especially tailored to... See More ⇒

 9.1. Size:594K  fairchild semi
fqb8n25tm.pdf pdf_icon

FQB8N60C

May 2000 TM QFET QFET QFET QFET FQB8N25 / FQI8N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.0A, 250V, RDS(on) = 0.55 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has... See More ⇒

Detailed specifications: FQB5N50C , FQB5N90 , FQB6N80 , FCH104N60FF085 , FQB7N60 , FCPF2250N80Z , FQB7P20 , FQB7P20TMF085 , 2SK3878 , FCH072N60FF085 , FQB8P10 , FQB9N50C , FQD10N20C , FDMC8321LDC , FQD10N20L , FDPF041N06BL1 , FQD11P06 .

History: QM2401J | FDMC8321LDC | IRFP264 | IRFB3507PBF

Keywords - FQB8N60C MOSFET specs

 FQB8N60C cross reference
 FQB8N60C equivalent finder
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