NCEP1575GU Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP1575GU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 175 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 285 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0148 Ohm

Encapsulados: PDFN5X6-8L

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NCEP1575GU datasheet

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NCEP1575GU

http //www.ncepower.com NCEP1575GU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1575GU uses Super Trench technology that is V =150V,I =75A DS D uniquely optimized to provide the most efficient high R =13m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and Excellent gate charge x R product(FOM) DS(on) switching p

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NCEP1575GU

http //www.ncepower.com NCEP1570,NCEP1570D NCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(

 7.2. Size:316K  ncepower
ncep1570d.pdf pdf_icon

NCEP1575GU

http //www.ncepower.com NCEP1570,NCEP1570D NCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(

 7.3. Size:316K  ncepower
ncep1570.pdf pdf_icon

NCEP1575GU

http //www.ncepower.com NCEP1570,NCEP1570D NCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(

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