All MOSFET. NCEP1575GU Datasheet

 

NCEP1575GU Datasheet and Replacement


   Type Designator: NCEP1575GU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 175 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 285 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0148 Ohm
   Package: PDFN5X6-8L
 

 NCEP1575GU substitution

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NCEP1575GU Datasheet (PDF)

 ..1. Size:707K  ncepower
 ncep1575gu.pdf pdf_icon

NCEP1575GU

http://www.ncepower.com NCEP1575GUNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP1575GU uses Super Trench technology that isV =150V,I =75ADS Duniquely optimized to provide the most efficient highR =13m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andExcellent gate charge x R product(FOM)DS(on)switching p

 7.1. Size:316K  ncepower
 ncep1570 ncep1570d.pdf pdf_icon

NCEP1575GU

http://www.ncepower.com NCEP1570,NCEP1570DNCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(

 7.2. Size:316K  ncepower
 ncep1570d.pdf pdf_icon

NCEP1575GU

http://www.ncepower.com NCEP1570,NCEP1570DNCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(

 7.3. Size:316K  ncepower
 ncep1570.pdf pdf_icon

NCEP1575GU

http://www.ncepower.com NCEP1570,NCEP1570DNCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(

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Datasheet: NCEP1505S , NCEP1520AK , NCEP1520BK , NCEP1520G , NCEP1545A , NCEP1545AG , NCEP1545AK , NCEP1570GU , IRF3205 , NCEP1580D , NCEP1580GU , NCEP15P30A , NCEP15P30AK , NCEP15T10V , NCEP15T14LL , NCEP15T14T , NCEP15T18T .

Keywords - NCEP1575GU MOSFET datasheet

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